SGS Thomson Microelectronics STS2DNFS30L Datasheet
STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
V
DSS
30 V < 0.11 Ω 3 A
R
DS(on)
STS2DNFS30L
N-CHANNEL 30V - 0.09Ω - 3A SO-8
PRELIMINARY DATA
I
D
SCHOTTKY
I
F(AV )
1 A 30 V 0.46 V
V
RRM
V
F(MAX)
SO-8
DESCRIPTION
This product associates the latest low voltage
STripFET™ in n-channel version to a low drop
INTERNAL SCHEMATIC DIAGRAM
Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cellular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
(●)
DM
P
TOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 15 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed) 12 A
Total Dissipation at TC = 25°C
30 V
30 V
3A
1.9 A
2W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RSM
dv/dt
(•)Pu l se width limited by safe operating area
August 2001
Repetitive Peak Reverse Voltage 30 V
RMS Forward Current 7 A
Average Forward Current TL = 135°C
Surge Non Repetitive Forward Current tp = 10 ms
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage 10000 V/µs
δ = 0.5
Sinusoidal
tp = 100 µs1 A
1A
45 A
1/6
STS2DNFS30L
THERMA L D ATA
Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET 62.5 °C/W
Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY Maximum 100 °C/W
T
stg
T
l
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Storage Temperature Range -55 to 150 °C
Junction Temperature 150 °C
(*) Mounted on FR-4 board (Steady State)
Drain-source
ID = 250 µA, VGS = 0 30 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 15 V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 1.5 A
VGS = 4.5V, ID = 1.5 A
1V
0.09 0.11 Ω
0.13 0.15 Ω
1µA
10 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 15 V
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 45 pF
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, VGS = 0
= 1.5 A 2.5 S
, ID
121 pF
11 pF
2/6
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