SGS Thomson Microelectronics STS2DNF30L Datasheet
STS2DNF30L
N-CHANNEL 30V - 0.09 Ω - 3A SO-8
STripFET™ POWER MOSFET
TYPE
V
DSS
STS2DNF30L 30 V <0.011
■ TYPICAL R
■ STANDARD OUTLINE FO R EAS Y
(on) = 0.09 Ω
DS
R
DS(on)
I
D
3 A
Ω
AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
(
DM
P
tot
T
stg
T
j
(
Pulse widt h l i m i ted by safe operating area.
•)
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
30 V
30 V
Gate- source Voltage ± 18 V V
Drain Current (continuos) at TC = 25°C
3
Single Operating
Drain Current (continuos) at TC = 100°C
1.9
Single Operating
•)
Drain Current (pulsed) 9 A
Total Dissipation at TC = 25°C Dual Operating
Total Dissipation at T
= 25°C Single Operating
C
1.6
2
Storage Temperature -55 to 150 °C
Max. Operating Junction Temperature 150 °C
A
A
W
W
1/8February 2002
STS2DNF30L
THERMAL DATA
Rthj-amb
T
T
stg
(*)
Mounte d on F R-4 board (t [ 10 se c.)
(*)Thermal Resistance Junction-ambient Single Operation
Thermal Operating Junction-ambient
j
Storage Temperature
Dual Operating
62.5
78
150
-55 to 175
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA, VGS = 0
D
30 V
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
= ± 18V
V
GS
1
10
±100 nA
ON
(1)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS ID = 250 µA
DS
= 10 V ID = 1 A
V
GS
V
= 5 V ID = 1 A
GS
1 1.7 2.5 V
0.09
0.13
0.011
0.15
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS>ID(on)xRDS(on)max ID
= 25V, f = 1 MHz, VGS = 0
V
DS
=2.5A
2.5 S
121
45
11
µA
µA
Ω
Ω
pF
pF
pF
2/8
STS2DNF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 1 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 4.5 V
G
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 24V ID= 2A VGS= 10V
V
DD
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 1 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 4.5 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 2 A VGS = 0
SD
= 2 A di/dt = 100A/µs
I
SD
V
= 30 V Tj = 150°C
DD
(see test circuit, Figure 5)
19
20
4.5
1.7
0.9
12
8
3
12
1.3 V
19
8.1
0.85
ns
ns
nC
nC
nC
ns
ns
A
A
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8
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