SGS Thomson Microelectronics STS2DNE60 Datasheet
®
N - CHANNEL 60V - 0.180Ω - 2A SO-8
TYPE V
STS2DNE60 60 V < 0.23 Ω 2 A
■
TYPICAL R
■
STANDARD OUTLINE FOR EASY
DS(on)
DSS
= 0.18
AUTOMATED SUR F ACE MOUNT ASSEMBLY
■
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
R
DS(on)
I
D
Ω
STS2DNE60
STripFET POWER MOSFET
PRELIMINARY DATA
SO-8
APPLICATIONS
■
DC MOTOR DRIVE
■
DC-DC CONVERTERS
■
BATTERY MANAGM ENT IN NOMADI C
INTERNAL SCHEMATIC DIAGRAM
EQUIPMENT
■
POWER MANAGEMENT IN
PORTABLE/DESKTOP PC
s
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
Drain-source Voltage (VGS = 0) 60 V
DS
Drain- gate Voltage (RGS = 20 kΩ)60V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC
D
Single Operation
Drain Current (continuous) at T
Single Operation
(•) Drain Current (pulsed) 8 A
Total Dissipation at Tc = 25 oC Dual Operation
tot
Total Dissipation at T
= 25 oC Sinlge Operation
c
= 100 oC
c
2
1.3
2
1.6
A
A
W
W
October 1999
1/5
STS2DNE60
THERMAL DATA
R
thj-amb
T
T
*Thermal Resistance Junction-ambient Single Operation
Dual Operation
Maximum Operating Junction Temperature
j
Storage Temperature
stg
78
62.5
150
-55 to 150
o
C/W
o
C/W
o
o
C
C
(*)
Mounted on FR-4 board (t
ELECTRICAL CHARACTERISTICS
≤ 10
sec)
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 0 60 V
GS
Breakdown Voltage
I
I
ON (∗
DSS
GSS
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
)
DS
= 0)
GS
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
= ± 20 V ± 100 nA
V
GS
1
10
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
Static Drain-source On
= VGS ID = 250 µA23.34V
DS
VGS = 10 V ID = 1 A 0.180 0.23 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
2A
DYNAMIC
µA
µA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
VDS > I
D(on)
x R
DS(on)max
ID = 1 A 1.8 S
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
V
= 25 V f = 1 MHz V
DS
= 0 V 310
GS
45
12
Capacitance
2/5
pF
pF
pF
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