SGS Thomson Microelectronics STS1DNC45 Datasheet
STS1DNC45
DUAL N-CHANNEL 450V - 4.1Ω -0.4ASO-8
SuperMESH™ POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STS1DNC45 450 V < 4.5 Ω 0.4 A
■ TYPICAL R
■ STANDARD OUTLINE FOR EASY
(on) = 4.1Ω
DS
AUTOMATED SURFACE MOUNT ASSEMBLY
■ GATE CHARGE MINIMIZED
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST ’s well established stripbased PowerMESH™ layout. In addition to pus hing
on-resistance significantly down, s pec ial care is taken to ensure a very good dv/dt capability for the
most demanding app lications. Such series compl ements ST full range of high voltage MOSFETs including revolutionary MDm es h™ products.
APPLICATIONS
■ SWITCH MODE LOW POWER SUPPLIES
(SMPS)
■ DC-DC CONVERTERS
■ LOW POWER, LOW CO ST CFL (COMPACT
FLUORESCENT LAMPS)
■ LOW POWER BATTERY CHA RGERS
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
450 V
450 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 1.6 A
Total Dissipation at TC= 25°C Dual Operation
Total Dissipation at TC= 25°C Single Operation
(1)ISD≤ 0.4 A, di/dt ≤100A/µs, VDD≤ V
0.40
0.25
1.6
2
(BR)DSS,Tj≤TJMAX.
A
A
W
W
1/8June 2003
STS1DNC45
THERMAL DATA
Rthj-amb(#) Thermal Resistance Junction-ambient Max Single Operation
Thermal Resistance Junction-ambient Max Dual Operation
T
j
T
stg
(#) When Mounted on FR4 board (Steady State)
Max. Operating Junction Temperature 150 °C
Storage Temperature –65 to 150 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
62.5
78
0.4 A
30 mJ
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µA, VGS= 0 450 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ± 30V ±100 nA
GS
1µA
50 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID= 0.5 A
= 250µA
2.3 3 3.7 V
4.1 4.5 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=25V,ID= 0.5 A 1.1 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 27.5 pF
Reverse Transfer
Capacitance
V
=25V,f=1MHz,VGS=0
DS
160 pF
4.7 pF
2/8
STS1DNC45
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 4 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 0.4 A
(2)
Source-drain Current (pulsed) 1.6 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=225V,ID= 0.5 A
DD
= 4.7Ω VGS=10V
R
G
(see test circuit, Figure 3)
VDD=360V,ID= 1.5 A,
V
=10V
GS
= 360 V, ID= 1.5 A
V
DD
RG=4.7Ω, VGS=10V
(see test circuit, Figure 5)
ISD= 0.4 A, VGS=0
= 0.4 A, di/dt = 100A/µs,
I
SD
VDD=100V,Tj=150°C
(see test circuit, Figure 5)
6.7 ns
7
10 nC
1.3
3.2
8.5
12
18
1.6 V
225
530
4.7
nC
nC
ns
ns
ns
ns
nC
A
Safe Operating Area Thermal Im pedance
3/8
Loading...