SGS Thomson Microelectronics STS10NF30L Datasheet
N - CHANNEL 30V - 0.011Ω - 10A SO-8
TYPE V
ST S10NF30L 30 V < 0.0135 Ω 10 A
■ TYPICALR
■ STANDARD OUTLINE FOR EASY
DS(on)
DSS
= 0.011 Ω
AUTOMATEDSURFACEMOUNTASSEMBLY
■ LOW THRESHOLDDRIVE
DESCRIPTION
This Power MOSFET is the secondgeneration of
STMicroelectronics unique ” Single Feature
Size
”
strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
R
DS(on)
I
D
STS10NF30L
STripFET POWER MOSFET
PRELIMINARY DATA
SO-8
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DCCONVERTERS
■ BATTERYMANAGMENTIN NOMADIC
INTERNAL SCHEMATIC DIAGRAM
EQUIPMENT
■ POWERMANAGEMENTIN
PORTABLE/DESKTOPPC
s
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
DM
P
(•) Pulse width limited by safeoperating area
Drain-source Voltage (VGS=0) 30 V
DS
Drain- g at e Voltage (RGS=20kΩ)30V
DGR
Gate-s ource Voltage ± 20 V
GS
Drain Cur rent (co nt inuous) at T c = 25oC
I
D
Drain Cur rent (co nt inuous) at T
(•) Drain Curr ent (pulsed) 40 A
Tot al Dissi pat ion at Tc = 25oC 2.5 W
tot
=100oC
c
10
6.5
A
A
June 2000
1/6
STS10NF30L
THERMAL DATA
R
thj-amb
Tj
T
(*)
Mountedon FR-4board (t
(*)T hermal Resist ance Junction-ambient
Maximum Operating J unct ion Tem p er at ure
stg
St orage Tem pe ra tur e
≤ 10
sec)
50
150
-55 to 150
o
C/W
o
o
C
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n Vo lt age
I
I
ON (∗
DSS
GSS
Zero Gate Voltage
Drain Curre nt (V
Gat e- bod y Leakag e
Current (V
)
DS
=0)
GS
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA11.62.5V
Sta t ic Drain-s our c e On
Resistance
On State Drain Current VDS>I
VGS=10V ID=5A
V
=4.5V ID=5A
GS
D(on)xRDS(on )max
0.011
0.016
0.0135
0.0220
10 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=5A 20 S
VDS=25V f=1MHz VGS= 0 V 1450
390
150
µA
µ
Ω
Ω
pF
pF
pF
A
2/6
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