SGS Thomson Microelectronics STQ1NE10L Datasheet
STQ1NE10L
N-CHANNEL 100V - 0.3 Ω - 1A TO-92
STripFET™ POWER MOSFET
TYPE
V
DSS
STQ1NE10L 100 V <0.4
■ TYPICAL R
■ EXCEPTIONA L HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ AVALANCHE RUGGED TECHNOLOGY
■ LOW THRESHOLD DRIVE
(on) = 0.3 Ω
DS
R
DS(on)
I
D
Ω
1 A
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVES, etc.)
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
TO-92
TO-92
(Ammopack)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
(1)
P
tot
dv/dt
E
AS
T
stg
T
j
(
Pulse widt h l i m i ted by safe operating area.
•)
(1)
Related to Rthj -l
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
100 V
100 V
Gate- source Voltage ± 16 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 4 A
Total Dissipation at TC = 25°C
1A
0.6 A
3W
Derating Factor 0.025 W/°C
(2)
Peak Diode Recovery voltage slope 6 V/ns
(3)
Single Pulse Avalanche Energy 400 mJ
Storage Temperature
Operating Junction Temperature °C
(2) ISD ≤1A, di/dt ≤200A/ µ s , VDD ≤ V
(3) Starting Tj = 25 oC, ID = 1A, VDD = 50V
-55 to 150
(BR)DSS
, Tj ≤ T
°C
JMAX
1/9December 2002
STQ1NE10L
THERMA L D ATA
Rthj-
Lead
Rthj-amb
T
l
Thermal Resistance Junction-Lead
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
40
125
260
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 250 µA, VGS = 0
V
(BR)DSS
Drain-source
I
D
100 V
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 16 V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= V
DS
GS
= 10 V ID = 0.5 A
V
GS
= 5 V ID = 0.5 A
V
GS
ID = 250 µA
1 2.5 V
0.30
0.35
0.40
0.45
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 15V ID = 0.5 A
DS
= 25V f = 1 MHz VGS = 0
V
DS
2S
345
45
20
µA
µA
Ω
Ω
pF
pF
pF
2/9
STQ1NE10L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 50 V ID = 0.5 A
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V
DD
= 4.7
R
Ω
G
VGS = 10 V
(Resistive Load, Figure 3)
= 80 V ID= 1 A VGS= 5 V
V
DD
= 50 V ID = 0.5 A
V
DD
= 4.7Ω, V
R
G
GS
= 5 V
(Resistive Load, Figure 3)
I
= 1 A VGS = 0
SD
I
= 1 A di/dt = 100A/µs
SD
= 30 V Tj = 150°C
V
DD
(see test circuit, Figure 5)
11
12
7
1.5
3.5
20
13
1
4
1.5 V
52
90
3.5
ns
ns
nC
nC
nC
ns
ns
A
A
ns
nC
A
Saf e Operating Area
Thermal Impedance Junction-lead
3/9
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