SGS Thomson Microelectronics STQ1NC60R Datasheet
STQ1NC60R
N-CHANNEL 600V - 12Ω -0.3ATO-92
PowerMESH™II Power M OSF ET
TYPE V
STQ1NC60R 600 V < 15 Ω 0.3 A
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AV ALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
(on) = 12 Ω
DS
DSS
R
DS(on)
I
D
DESCRIPTION
Using the latest high voltage MESH OVERLAY™II
process, STMicroelectronics has des igned an a dvanced family of power MOSFETs with outstanding
performances. The new patent pending strip lay out
coupled with the Company’s prop rietary e dge termination structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
APPLICATIONS
■ LOW SWITCH MODE POWER SUPPLIES
(SMPS)
■ BATTERY CHARGER
TO-92
BULK
TO-92
(AMMOPACK)
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STQ1NC60R Q1NC60R TO-92 BULK
STQ1NC60R-AP Q1NC60R TO-92 AMMOPACK
1/9July 2003
STQ1NC60R
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
T
j
T
stg
() Pulse width limited by safe operating area
≤0.3A, di/dt ≤100A/µs, VDD≤ V
(1) I
SD
THERMAL DATA
Rthj-amb Thermal Resistance Junction-ambient Max 120 °C/W
Rthj-lead Thermal Resistance Junction-lead Max 40 °C/W
T
l
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
600 V
600 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 1.2 A
Total Dissipation at TC= 25°C
0.3 A
0.19 A
3.1 W
Derating Factor 0.025 W/°C
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-65 to 150
-65 to 150
TO-92
Maximum Lead Temperature For Soldering Purpose
260 °C
°C
°C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
0.3 A
60 mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID= 250 µA, VGS= 0 600 V
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 30V ±100 nA
GS
V
DS=VGS,ID
= 250µA
234V
1
50
VGS=10V,ID= 0.3 A 12 15 Ω
µA
µA
2/9
STQ1NC60R
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID= 0.3 A 0.87 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area .
Source-drain Current
(2)
Source-drain Current (pulsed)
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=25V,f=1MHz,VGS=0
V
DS
VDD=300V,ID= 0.5 A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
VDD=480V,ID=1A,
V
=10V,RG= 4.7Ω
GS
= 480V, ID=1A,
V
DD
R
=4.7Ω, VGS= 10V
G
(Inductive Load see, Figure 5)
ISD= 0.3 A, VGS=0
= 1 A, di/dt = 100A/µs
I
SD
V
=25V,Tj= 150°C
DD
(see test circuit, Figure 5)
108
18
2.5
7.2
8
7.3
3.4
2.5
33
11
43
450
720
3.2
10
0.3
1.2
1.6 V
pF
pF
pF
ns
ns
nC
nC
nC
ns
ns
ns
A
A
ns
µC
A
Thermal I mpedanceSafe Operating Area
3/9
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