SGS Thomson Microelectronics STPSA92-AP, STPSA92 Datasheet
®
SMALL SIGNAL PNP TRANSISTOR
Ordering Code Marking Package / Shipment
STPSA92 PSA92 TO-92 / Bulk
STPSA92-AP PSA92 TO-92 / Ammopack
■ SILICON EPI TAX IA L PLANAR PN P HIGH
VOLTAGE TRANSISTOR
■ TO-92 PACKAGE SUITABLE FOR
THROU GH-HOLE PCB ASSEMBLY
■ THE NPN COMPLE M ENT A RY T YP E IS
STPSA42
APPLICATIONS
■ VIDEO AMPLIFIER CIRC UITS (RGB
CATHODE CURRENT CONTROL)
■ TELEPHONE WIRELINE INTERFACE (HOOK
SWITCHES, DIALER CIRCUITS)
TO-92
Bulk
STPSA92
PRELIMINARY DATA
TO-92
Ammopack
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) -300 V
CBO
Collector-Emitter Voltage (IB = 0) -300 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -0.5 A
I
C
Collector Peak Current (tp < 5 ms) -0.6 A
CM
Total Dissipation at TC = 25 oC 625 mW
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
February 2003
1/5
STPSA92
THERMAL DATA
R
R
thj-amb
thj-case
•
Thermal Resistance Junction-Ambient Max
•
Thermal Resistance Junction-Case Max
200
83.3
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
V
(BR)CBO
Collector Cut-off
Current (I
= 0)
E
Collector-Base
= -200 V -100 nA
V
CB
= -100 µA
I
C
-300 V
Breakdown Voltage
(I
= 0)
E
V
(BR)CEO
∗ Collector-Emitter
= -1 mA -300 V
I
C
Breakdown Voltage
(I
= 0)
B
V
(BR)EBO
Emitter-Base
= -100 µA
I
E
-5 V
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
IC = -20 mA IB = - 2 mA -0.5 V
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
IC = -20 mA IB = - 2 mA -0.9 V
Saturation Voltage
h
∗ DC Current Gain IC = -1 mA VCE = -10 V
FE
f
C
CEO
Transition Frequency IC = -10mA VCE = -20 V f = 50 MHz 50 MHz
T
Collector-Emitter
I
= -10 mA VCE = -10 V
C
I
= -30 mA VCE = -10 V
C
VCE = -20 V f = 1 MHz 50 pF
25
40
40
Capacitance
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
2/5
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