LOW DROP POWER SCHOTTKY RECTIFIER
MAINPRODUCTCHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 150 °C
(max) 0.40V
V
F
FEATURESAND BENEFITS
LOW COST DEVICE WITH LOW DROP FORWARD VOLTAGE FOR LESS POWER
DISSIPATIONANDREDUCED HEATSINK
OPTIMIZEDCONDUCTION/REVERSE LOSSES
TRADE-OFFWHICHLEADSTOTHEHIGHEST
YIELDINTHEAPPLICATIONS
HIGHPOWER SURFACE MOUNTMINIATURE
PACKAGE
8A
30 V
STPS8L30B
2
3
4
4
1
NC
DPAK
(TAB)
2
3
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
PowerSupplies andhigh frequencyDCto DCconverters.
Packaged in DPAK, this device is especially intended for use as a Rectifier at the secondary of
3.3V SMPSor DC/DCunits.
ABSOLUTERATINGS
(limitingvalues)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Tj Maximum junctiontemperature 150
Repetitivepeak reversevoltage 30 V
RMSforwardcurrent 7 A
Averageforward current Tc= 135°C δ = 0.5 8 A
Surgenon repetitiveforwardcurrent tp = 10 ms Sinusoidal 75 A
Repetitivepeak reversecurrent tp = 2 µs F = 1kHz square 1 A
Non repetitivepeak reversecurrent tp = 100µs square 2 A
Storagetemperaturerange - 65 to + 150 °C
°
dV/dt Criticalrate of riseof reversevoltage 10000 V/µs
C
dPtot
*:
dTj
October 1998 - Ed: 4A
<
Rth(j−a
1
thermal runawayconditionfor a diodeon its ownheatsink
)
1/4
STPS8L30B
THERMALRESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junctionto case 2.5
STATICELECTRICALCHARACTERISTICS
Symbol TestsConditions Tests Conditions Min. Typ. Max. Unit
* Reverseleakagecurrent Tj= 25°CV
I
R
R=VRRM
Tj= 100°C1540
* Forwardvoltage drop Tj= 25°CI
V
F
= 8 A 0.49 V
F
Tj= 125°C 0.35 0.4
Tj= 25°CI
= 16A 0.63
F
Tj= 125°C 0.48 0.57
Pulse test: * tp = 380 µs, δ <2%
Toevaluate the maximum conductionlosses usethefollowingequation:
P = 0.23x I
F(AV)
+0.021I
F2(RMS)
°
C/W
1mA
Fig. 1:
Averageforward power dissipation versus
averageforwardcurrent.
PF(av)(W)
5.0
4.0
3.0
2.0
1.0
0.0
δ = 0.05
0246810
δ = 0.1
δ = 0.2
IF(av) (A)
δ= 0.5
δ
=tp/T
δ =1
T
tp
Fig. 2: Average forward current versus ambient
temperature(δ=0.5).
IF(av)(A)
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
Rth(j-a)=Rth(j-c)
Rth(j-a)=70°C/W
Tamb(°C)
2/4
STPS8L30B
Fig. 3:
Nonrepetitivesurgepeak forward current
versusoverload duration(maximum values).
IM(A)
120
100
80
Tc=25°C
60
40
IM
20
0
1E-3 1E-2 1E-1 1E+0
Fig. 5:
t
δ=0.5
t(s)
Reverse leakage current versus reverse
Tc=75°C
Tc=125°C
voltageapplied (typicalvalues).
IR(mA)
3E+2
1E+2
1E+1
Tj=150°C
Tj=125°C
Fig. 4:
Relative variation of thermal impedance
junctionto ambient versuspulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-4 1E-3 1E-2 1E-1 1E+0
Fig. 6:
Junction capacitance versus reverse
tp(s)
T
=tp/T tp
δ
voltageapplied (typical values).
C(pF)
2000
F=1MHz
1000
Tj=25°C
1E+0
1E-1
Tj=25°C
1E-2
VR(V)
1E-3
0 5 10 15 20 25 30
Fig. 7: Forward voltage drop versus forward current(maximum values).
IFM(A)
100.0
Typicalvalues
10.0
Tj=150°C
Tj=125°C
1.0
Tj=25°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
500
200
100
11040
VR(V)
Fig.8: Thermalresistancejunctionto ambientver-
suscoppersurfaceunder tab(Epoxyprintedcircuit
boardFR4, copper thickness:35µm).
Rth(j-a) (°C/W)
100
80
60
40
20
S(Cu)
0
02468101214161820
(cm )
3/4
STPS8L30B
PACKAGEMECHANICAL DATA
DPAK
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max Min. Typ. Max.
A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
L2 0.80 0.031
L4 0.60 1.00 0.023 0.039
V2 0° 8° 0° 8°
FOOTPRINT DIMENSIONS (in millimeters)
6.7
6.7
6.7
3
1.61.6
2.32.3
Orderingtype Marking Package Weight Base qty Deliverymode
STPS8L30B STPS8L30B DPAK 0.3g 75 Tube
STPS8L30B-TR STPS8L30B DPAK 0.3g 2500 Tape& reel
Epoxymeets UL94,V0
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