How it Works
SGS Thomson Microelectronics
Loading...
STPS8H100D
Datasheet
7 pgs93.08 Kb0

SGS Thomson Microelectronics STPS8H100G-1, STPS8H100G, STPS8H100D, STPS8H100F Datasheet

Download
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAINPRODUCTCHARACTERISTICS
STPS8H100D/F/G/G-1
I
F(AV)
V
RRM
8A
100 V
Tj (max) 175 °C
(max) 0.58V
V
F
FEATURESAND BENEFITS
NEGLIGIBLESWITCHINGLOSSES HIGHJUNCTIONTEMPERATURECAPABILITY
TO-220AC
STPS8H100D
A
K
K
ISOWATT220AC
STPS8H100F
LOWLEAKAGECURRENT GOOD TRADE OFF BETWEEN LEAKAGE
CURRENTAND FORWARDVOLTAGE DROP
K
AVALANCHERATED
Schottkybarrierrectifier designedfor high fre­quency compact Switched Mode Power Sup­plies sucha s adaptatorsand on board DC/DC converters.
K
NC
2
PAK
I
STPS8H100G-1
A
D2PAK
STPS8H100G
A
NC
ABSOLUTE RATINGS (limitingvalues)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitivepeak reverse voltage 100 V RMSforward current 30 A Averageforwardcurrent
δ
=0.5
TO-220AC/
2
PAK/ D2PAK
I
Tc=165°C8 A
ISOWATT220AC Tc =150°C
I
FSM
Surgenon repetitiveforward
tp =10 ms sinusoidal 250 A
current
I
RRM
I
RSM
E
I
Repetitivepeak reverse current tp =2 µs F = 1kHz square 1 A Non repetitivepeakreverse current tp =100 µs square 3 A Non repetitiveavalancheenergy Tj=25°CL=60mH
as
=2A
I
as
Repetitiveavalanchecurrent Va = 1.5x VRtyp
ar
24 mJ
2A Currentdecayinglinearly to 0 in1µs Frequencylimitedby Tj max.
T
Storagetemperaturerange - 65 to + 175 °C
stg
Tj Maximum operatingjunctiontemperature 175 °C
dV/dt Criticalrate of riseof rise voltage 10000 V/µs
A
August 1999-Ed: 4A
1/7
STPS8H100D/F/G/G-1
THERMALRESISTANCES
Symbol Parameter Value Unit
R R
th (j-c) th (j-c)
Junctionto case Junctionto case
TO-220AC/ I ISOWATT220AC
2
PAK/ D2PAK
STATICELECTRICALCHARACTERISTICS
Symbol Parameter TestsConditions Min. Typ. Max. Unit
I
* Reverseleakage current Tj = 25°CV
R
R=VRRM
Tj = 125°C26mA
V
** Forwardvoltagedrop Tj = 25°CI
F
Tj = 25°CI Tj = 25°CI Tj = 125°CI Tj = 125°CI Tj = 125°CI
= 8 A 0.71 V
F
= 10 A 0.77
F
= 16 A 0.81
F
= 8 A 0.56 0.58
F
= 10 A 0.59 0.64
F
= 16 A 0.65 0.68
F
1.6 °C/W 4 °C/W
4.5
µ
A
Pulse test : * tp = 5 ms,δ<2%
** tp = 380µs, δ <2%
To evaluate the maximum conduction losses use the following equation : P = 0.48 x I
Fig. 1: Average forward power dissipation versus averageforwardcurrent. (TO-220AC/ ISOWATT220AC/ I
PF(av)(W)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 012345678910
F(AV)
+ 0.0125 x I
δ = 0.1
δ=0.05
F2(RMS)
δ = 0.2
IF(av) (A)
2
PAK/ D2PAK)
δ = 0.5
δ =1
T
=tp/T
δ
Fig. 2-1: Average forward current versus ambient temperature(δ=0.5)(TO-220AC/ I
IF(av)(A)
10
8
6
4
2
tp
δ
0
0 20 40 60 80 100 120 140 160 180
=tp/T
2
PAK/ D2PAK).
Rth(j-a)=Rth(j-c)
T
tp
Rth(j-a)=15°C/W
Tamb(°C)
2/7
STPS8H100D/F/G/G-1
Fig. 2-2:
Averageforward current versus ambient
temperature(δ=0.5)(ISOWATT220AC).
IF(av)(A)
10
Rth(j-a)=Rth(j-c)
8
6
4
T
Rth(j-a)=50°C/W
2
tp
=tp/T
δ
0
0 20 40 60 80 100 120 140 160 180
Tamb(°C)
Fig.3-2: Nonrepetitivesurge peakforwardcurrent
versusoverloadduration(maximum values) (ISOWATT220AC).
IM(A)
100
90 80 70 60 50 40 30
IM
20 10
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
Tc=100°C
t(s)
Tc=75°C
Tc=125°C
Fig.3-1:
versusoverloadduration(maximumvalues) (TO-220AC/ I
Nonrepetitivesurge peakforwardcurrent
2
PAK / D2PAK).
IM(A)
160 140 120 100
Tc=75°C
80 60
t(s)
Tc=100°C
Tc=125°C
40
IM
20
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
Fig. 4-1: Relative variation of thermalimpedance
junctionto caseversus pulseduration (TO-220AC/ I
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
0.0 1E-4 1E-3 1E-2 1E-1 1E+0
2
PAK/ D2PAK).
Single pulse
tp(s)
δ
=tp/T
T
tp
Fig. 4-2: Relative variation of thermal impedance junctionto caseversuspulse duration (ISOWATT220AC).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
0.0 1E-3 1E-2 1E-1 1E+0 1E+1
Single pulse
tp(s)
δ
=tp/T
T
tp
Fig. 5: Reverse leakage current versus reverse voltageapplied (typical values).
IR(µA)
5E+3 1E+3
1E+2 1E+1 1E+0
1E-1 1E-2
0 102030405060708090100
Tj=125°C
Tj=25°C
VR(V)
3/7
STPS8H100D/F/G/G-1
Fig. 6:
Junction capacitance versus reverse volt-
ageapplied(typical values).
C(nF)
1000
500
200
100
1 10 100
VR(V)
F=1MHz Tj=25°C
Fig.8: Thermal resistancejunctionto ambientver­suscoppersurfaceunder tab (Epoxyprintedcircuit boardFR4, copperthickness:35µm)(D
Rth(j-a) (°C/W)
80 70 60 50 40 30 20 10
0
0 4 8 1216202428323640
S(Cu)
(cm )
2
PAK).
Fig. 7:
Forward voltage drop versus forward cur-
rent(maximumvalues).
IFM(A)
50.0
10.0
1.0
0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Tj=125°C
Tj=25°C
VFM(V)
4/7
PACKAGEMECHANICALDATA
TO-220AC
H2
L5
ØI
L6
L2
L9
F1
L4
F
G
STPS8H100D/F/G/G-1
DIMENSIONS
REF.
A
C
A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051
L7
D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
D
G 4.95 5.15 0.194 0.202
H2 10.00 10.40 0.393 0.409
L2 16.40typ. 0.645typ. L4 13.00 14.00 0.511 0.551
M
E
L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102typ.
Diam.I 3.75 3.85 0.147 0.151
Millimeters Inches
Min. Max. Min. Max.
PACKAGEMECHANICALDATA
ISOWATT220AC
H
Diam
L6
L2
L3
F1
F
G
A
B
DE
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106
L7
D 2.40 2.75 0.094 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
H 10.00 10.40 0.394 0.409 L2 16.00 0.630 L3 28.60 30.60 1.125 1.205 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126
5/7
STPS8H100D/F/G/G-1
PACKAGEMECHANICALDATA
2
PAK
D
E
L2
L
L3
A1
B2 B
G
* FLATZONE NO LESSTHAN 2mm
C2
DIMENSIONS
A
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
D
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C
R
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
A2
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
M
*
V2
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40typ. 0.016typ.
V2 0° 8° 0° 8°
FOOTPRINT
10.30
(in millimeters)D
16.90
8.90
2
PAK
3.70
5.08
1.30
6/7
PACKAGEMECHANICALDATA
2
PAK
I
E
L2
L1
L
e
b2 b1
b
c2
D
A1
STPS8H100D/F/G/G-1
DIMENSIONS
REF.
A
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
b 0.70 0.93 0.028 0.037 b1 1.14 1.17 0.044 0.046 b2 1.14 1.17 0.044 0.046
c 0.45 0.60 0.018 0.024
c2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
E 10.0 10.4 0.394 0.409
L 13.1 13.6 0.516 0.535
c
L1 3.48 3.78 0.137 0.149 L2 1.27 1.40 0.050 0.055
Millimeters Inches
Min. Max. Min. Max.
Orderingtype Marking Package Weight Base qty Deliverymode
STPS8H100D STPS8H100D TO-220AC 1.86g 50 Tube
STPS8H100F STPS8H100F ISOWATT220AC 2.00g 50 Tube
STPS8H100G-1 STPS8H100G I
STPS8H100G STPS8H100G D
STPS8H100G-TR STPS8H100G D
2
PAK 1.49g 50 Tube
2
PAK 1.48g 50 Tube
2
PAK 1.48g 500 Tape & reel
Epoxymeets UL94,V0
Informationfurnished is believedto be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such informationnor forany infringementof patents or other rights ofthird parties which mayresult fromits use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
7/7
Loading...
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use