SGS Thomson Microelectronics STPS80L60CY Datasheet
MAINPRODUCTCHARACTERISTICS
I
F(AV)
V
RRM
2 x 40 A
60 V
Tj (max) 150 °C
V
(max) 0.56V
F
FEATURESAND BENEFITS
VERYSMALL CONDUCTIONLOSSES
NEGLIGIBLESWITCHINGLOSSES
EXTREMELYFASTSWITCHING
LOW FORWARDVOLTAGEDROP
LOW THERMAL RESISTANCE
DESCRIPTION
STPS80L60CY
POWERSCHOTTKY RECTIFIER
PRELIMINARY DATASHEET
A1
K
A2
A2
K
A1
Dual center tap Schottky rectifier suited for CAD
computersand servers.
Packaged in Max247, this device is intended for
Max247
usein low voltage,highfrequencyswitchingpower
supplies, free wheeling and polarity protection
applications.
ABSOLUTE RATINGS (limiting values,per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
T
stg
Repetitivepeak reversevoltage 60 V
RMSforwardcurrent 50 A
Averageforwardcurrent Tc = 130°C
δ
= 0.5
Per diode
Per device
40
80
Surgenon repetitiveforwardcurrent tp = 10 ms sinusoidal 400 A
Repetitivepeak reversecurrent tp = 2 µs squareF =1kHz 2 A
Storagetemperaturerange - 65 to+ 150 °C
Tj Maximumoperating junctiontemperature * 150 °C
dV/dt Criticalrateof riseof reverse voltage 10000 V/µs
*:
dPtot
dTj
<
1
Rth(j−a
thermal runawayconditionfor a diode on its ownheatsink
)
A
July 1999- Ed:2A
1/3
STPS80L60CY
THERMALRESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junctionto case Perdiode 0.70
Whenthe diodes1 and2 are used simultaneously:
∆
Tj(diode1) = P(diode1)x R
(Perdiode) + P(diode2) x R
th(j-c)
Total 0.50
Coupling 0.3
th(c)
°
C/W
STATICELECTRICAL CHARACTERISTICS
(perdiode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
* Reverseleakagecurrent Tj = 25°CV
R
R=VRRM
1.8 mA
Tj = 125°C 0.4 0.9 A
V
* Forwardvoltagedrop Tj = 25°CI
F
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
Pulse test : * tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P = 0.36 x I
F(AV)
+ 0.005x I
F2(RMS)
= 40A 0.57 V
F
= 40A 0.50 0.56
F
= 80A 0.78
F
= 80A 0.69 0.77
F
2/3
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