SGS Thomson Microelectronics STPS80L30CY Datasheet
LOW DROP POWER SCHOTTKY RECTIFIER
MAINPRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 150 °C
V
(max) 0.38V
F
FEATURESAND BENEFITS
VERYSMALL CONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
EXTREMELYFASTSWITCHING
LOW FORWARD VOLTAGEDROP
LOW THERMAL RESISTANCE
DESCRIPTION
2 x 40 A
30 V
STPS80L30CY
PRELIMINARY DATASHEET
A1
K
A2
A2
K
A1
Dual center tap Schottky rectifier suited for CAD
computersand servers.
Packaged in MAX247, this device is intended for
usein low voltage,highfrequencyswitchingpower
Max247
supplies, free wheeling and polarity protection
applications.
ABSOLUTE RATINGS
(limitingvalues, perdiode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
T
stg
Repetitivepeak reversevoltage 30 V
RMSforwardcurrent 50 A
Averageforwardcurrent Tc = 135°C
δ = 0.5
Per diode
Per device
40
80
Surgenon repetitiveforward current tp = 10 ms sinusoidal 400 A
Repetitivepeak reversecurrent tp = 2µs F = 1kHz square 2 A
Storagetemperaturerange - 65 to+ 150
°
Tj Maximumoperating junctiontemperature 150 °C
dV/dt Critical rateof riseof reverse voltage 10000 V/µs
*:
dPtot
dTj
<
1
Rth(j−a
thermal runawayconditionfor a diodeon itsown heatsink
)
A
C
August 1999 -Ed: 1A
1/3
STPS80L30CY
THERMALRESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junctionto case Perdiode 0.7
Whenthe diodes1 and 2 areused simultaneously:
∆
Tj(diode1) = P(diode1)x R
(Perdiode) + P(diode2) x R
th(j-c)
Total 0.5
Coupling 0.3
th(c)
°
C/W
STATICELECTRICALCHARACTERISTICS
(perdiode)
Symbol Parameter Testsconditions Min. Typ. Max. Unit
I
* Reverseleakagecurrent Tj = 25°CV
R
R=VRRM
4mA
Tj = 125°C 0.7 1.5 A
V
* Forwardvoltagedrop Tj = 25°CI
F
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
Pulse test : * tp = 380µs, δ <2%
To evaluate the maximum conduction lossesuse the following equation :
P = 0.23 x I
F(AV)
+ 0.0037x I
F2(RMS)
= 40A 0.48 V
F
= 40A 0.34 0.38
F
= 80A 0.58
F
= 80A 0.48 0.53
F
2/3
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