SGS Thomson Microelectronics STPS80L15CY Datasheet
STPS80L15CY
LOW DROP OR-ing POWER SCHOTTKY RECTIFIER
PRELIMINARY DATASHEET
MAINPRODUCTCHARACTERISTICS
I
F(AV)
V
RRM
2 x 40 A
15 V
Tj (max) 125 °C
V
(max) 0.33V
F
FEATURESANDBENEFITS
Max247 PACKAGE, DUAL DIODE
CONSTRUCTION,2 x 40A
15V BLOCKINGVOLTAGESUITABLEFOR 5V
AND12V OR-ing
EXTREMELY LOW VOLTAGE VOLTAGE
DROP:0.33V@ 100°C
OPERATING JUNCTION TEMPERATURE:
125°C
DESCRIPTION
The STPS80L15CY uses proprietary barrier
technology to optimize forward voltage drop for
OR-ingfunctions in n-1 faulttolerant Switch Mode
PowerSupplies.
A1
K
A2
A2
K
A1
Max247
ABSOLUTERATINGS(limitingvalues, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
T
stg
Repetitivepeakreversevoltage 15 V
RMSforwardcurrent 50 A
Averageforwardcurrent Tc = 110°C
δ
= 0.5
Per diode
Per device
40
80
Surgenon repetitiveforwardcurrent tp = 10 ms sinusoidal 400 A
Repetitivepeakreversecurrent tp = 2 µs F = 1kHz square 2 A
Storagetemperaturerange - 65 to+ 150 °C
Tj Maximumoperating junctiontemperature 125 °C
dV/dt Criticalrateof riseof reversevoltage 10000 V/µs
November 1999 - Ed:4B
A
1/4
STPS80L15CY
THERMALRESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junctionto case Perdiode 0.7
Whenthe diodes 1 and 2 are used simultaneously:
∆
Tj(diode1) = P(diode1)x R
(Perdiode) + P(diode2) x R
th(j-c)
Total 0.5
Coupling 0.3
th(c)
°
C/W
STATICELECTRICALCHARACTERISTICS
(perdiode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
* Reverseleakagecurrent Tj = 25°CV
R
=5V 4 mA
R
Tj = 100°C 280 400
Tj = 25°CV
= 12V 11
R
Tj = 100°C 0.44 1.1 A
Tj = 25°CV
= 15V 16 mA
R
Tj = 100°C 0.53 1.3 A
V
* Forward voltage drop Tj = 25°CI
F
Tj = 100°CI
Tj = 25°CI
Tj = 100°CI
Pulse test : * tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P = 0.20 x I
F(AV)
+ 0.0032x I
F2(RMS)
= 40A 0.42 V
F
= 40A 0.30 0.33
F
= 80A 0.55
F
= 80A 0.40 0.46
F
Fig. 1: Averageforward powerdissipation versus
averageforwardcurrent(per diode).
PF(av)(W)
22
20
18
16
14
12
10
8
6
4
2
0
δ
=
0.05
0 5 10 15 20 25 30 35 40 45 50 55 60
2/4
δ = 0.2
δ
=
0.1
=
δ
IF(av)(A)
0.5
δ
=
1
T
δ
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature(δ=0.5,per diode).
IF(av)(A)
50
45
40
35
30
25
20
15
10
5
0
0 25 50 75 100 125
δ
=tp/T
T
tp
Rth(j-a)=Rth(j-c)
Rth(j-a)=5°C/W
Tamb(°C)
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