SGS Thomson Microelectronics STPS660CB-TR Datasheet
®
MAIN PRODUCT CHARA CTERI STICS
STPS660CB(-TR)
POWER SCHOTTKY RECTIFIER
I
F(AV)
V
RRM
(max) 0.59 V
V
F
2 x 3 A
60 V
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD DROP VOLTAGE
LOW CAPACITANCE
HIGH REVERSE AVALANCHE S URGE
CAPABILITY
TAPE AND REEL OPTION : -TR
DESCRIPTION
High voltage dual Schottky rectifier suited to
Switch Mode Power Supplies and other Power
Converters.
Packaged in DPAK, this device is intended for use
in medium voltage operation, and par ticularly, in
high frequency circuitries where low switching
losses are required.
ABSOLUTE RATINGS (limiting values)
2, 4(TAB)
1
4
3
2
3
1
DPAK
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitive peak reverse voltage 60 V
RMS forward current 6 A
Average forward current Tcase = 120°C
δ
= 0.5
Surge non repetitive forward current tp = 10 ms
3A
50 A
Sinusoidal
I
RRM
Repetitive peak reverse current tp = 2 µs
1A
F = 1kHz
T
stg
Storage temperature range - 65 to + 150
Tj Maximum junction temperature 125
dV/dt Critical rate of rise of reverse voltage 10000 V /µs
July 1998 - Ed : 1C
°
C
1/3
STPS660CB(-TR)
THERMA L RE SISTA NC ES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case Per diode 3.5
Total 2
STATIC ELECTRICAL CHARACTERISTICS
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
I
* Reverse leakage current Tj = 25°CV
R
= 60 V 30
R
Tj = 125°C2.510mA
V
** Forward voltage drop Tj = 25°CI
F
Tj = 125°CI
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.49 x I
Typical junction capacitance, VR = 0 V F = 1MHz Tj = 25°C C = 815pF
F(AV)
+ 0.035 I
F2(RMS)
= 3 A 0.65 V
F
= 3 A 0.55 0.59
F
°
C/W
µ
A
2/3
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