SGS Thomson Microelectronics STPS640CT, STPS640CF, STPS640CB Datasheet
MAINPRODUCTCHARACTERISTICS
STPS640CT/CF/CB
POWER SCHOTTKY RECTIFIER
I
F(AV)
V
RRM
2x3A
40 V
Tj (max) 150 °C
(max) 0.57 V
V
F
FEATURESAND BENEFITS
VERYSMALL CONDUCTIONLOSSES
NEGLIGIBLESWITCHINGLOSSES
EXTREMELYFASTSWITCHING
LOW FORWARDDROP VOLTAGE
LOW CAPACITANCE
LOW THERMAL RESISTANCE
INSULATEDPACKAGE:
Insulatingvoltage= 2000V DC
Capacitance= 12pF
SMD PACKAGE(tapeand reeloption: -TR)
DESCRIPTION
Dual Schottky rectifier suited to Switch Mode
PowerSuppliesandotherPowerConverters.
This device is intendedfor use in low and medium
voltage operation, and particulary, in high frequency circuitries where low switching losses are
required(free wheeling and polarityprotection).
A1
A2
TO-220AB
STPS640CT
K
A1
DPAK
STPS640CB
A2
K
A1
ISOWATT220AB
STPS640CF
K
A2
A2
K
A1
ABSOLUTERATINGS(limitingvalues, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
Repetitivepeak reversevoltage 40 V
RMSforwardcurrent TO-220AB/ ISOWATT220AB 10 A
DPAK 6
I
F(AV)
Averageforwardcurrent δ = 0.5 TO-220AB Tc= 135°C3A
ISOWATT220AB Tc= 130°C
DPAK Tc= 120°C
I
FSM
I
RRM
T
Surgenon repetitive forwardcurrent tp= 10 ms Sinusoidal 75 A
Repetitivepeak reversecurrent tp= 2µs F= 1kHz square 1 A
Storagetemperaturerange - 65 to +150 °C
stg
Tj Maximumoperatingjunction temperature 150 °C
dV/dt Criticalrate of riseof reverse voltage 10000 V/µs
August 1999 - Ed: 4A
1/6
STPS640CT/CF/CB
THERMALRESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th(c)
Junctionto case TO-220AB/DPAK Perdiode
Coupling TO-220AB 0.5 °C/W
Whenthe diodes 1 and2 areused simultaneously:
∆
Tj(diode1) = P(diode1)x R
(Perdiode) + P(diode2) x R
th(j-c)
Total
ISOWATT220AB Perdiode
Total
ISOWATT220AB 3
th(c)
5.5
3
7.5
5.2
°C/W
STATICELECTRICALCHARACTERISTICS
(per diode)
Symbol Tests Conditions Min. Typ. Max. Unit
* Reverseleakage current Tj = 25°CV
I
R
R=VRRM
100 µA
Tj = 125°C 2 10 mA
* Forwardvoltagedrop Tj = 25°CI
V
F
Tj = 25°CI
Tj = 125°CI
Tj = 125°CI
Pulse test : * tp = 380µs, δ <2%
To evaluate the maximum conduction losses use the followingequation :
P = 0.42 x I
Fig. 1: Average forward power dissipationversus
averageforwardcurrent (per diode).
F(AV)
+0.050 I
F2(RMS)
Fig. 2: Averagecurrentversusambienttemperature
(δ= 0.5,per diode).
= 3 A 0.63 V
F
= 6 A 0.84
F
= 3 A 0.5 0.57
F
= 6 A 0.67 0.72
F
PF(av)(W)
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
δ = 0.05
δ = 0.1
δ = 0.2
IF(av) (A)
δ= 0.5
δ
=tp/T
2/6
δ =1
T
IF(av)(A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
tp
0.5
0.0
0 25 50 75 100 125 150
δ
T
=tp/T
tp
Rth(j-a)=Rth(j-c)
ISOWATT220AB
Tamb(°C)
TO-220AB/DPAK
Rth(j-a)=15°C/W
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