SGS Thomson Microelectronics STPS60L30CW Datasheet
®
STPS60L30CW
LOW DROP POWER SCHOTTK Y RECTIFIER
MAIN PRODUCT CHARACTERISTI CS
I
F(AV)
V
RRM
2 x 30 A
30 V
Tj (max) 150 °C
(max) 0.38 V
V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOS SES
NEGLIGIBLE SW ITCHING LOS S ES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTA GE DROP
LOW THERMAL RESISTANCE
DESCRIPTION
Dual center tap Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
Packaged in TO247, this device is intended for
use in low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
A1
K
A2
A2
K
A1
TO247
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
T
stg
Tj
dV/dt
dPtot
* :
dTj
June 1999 - Ed: 2A
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 130°C
Surge non repetitive forward current tp = 10 ms Sinusoidal
Peak repetitive reverse current tp = 2 µs F = 1kHz square
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
<
Rth(j−a
Per diode
δ = 0.5
1
thermal runaway condition for a diode on its own heatsink
)
Per device
30 V
50 A
30
60
600 A
2A
- 65 to + 150 °C
150 °C
10000 V/µs
A
1/4
STPS60L30CW
THERMA L RE SISTA NC E
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junction to case
Per diode
Total
Coupling 0.1 °C/W
0.8
0.45
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTE RISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
°C/W
*
I
R
V
F
Reverse leakage
current
*
Forward voltage drop Tj = 25°CI
Tj = 25°CV
Tj = 125°C
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
= V
R
= 30 A
F
= 30 A
F
= 60 A
F
= 60 A
F
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.26x I
Fig. 1: Average forward power dis sipation versus
average forward current (per diode).
PF(av)(W)
18
16
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40
δ=0.05
F(AV)
+ 0.004 I
δ=0.2
δ=0.1
F2(RMS)
IF(av) (A)
δ=0.5
δ
=tp/T
Fig. 2: Average forward current versus ambient
temperature (δ=0.5) (per diode).
IF(av)(A)
35
δ=1
T
tp
30
25
20
15
10
5
0
0 25 50 75 100 125 150
δ
RRM
=tp/T
4mA
250 500 mA
0.46 V
0.33 0.38
0.55
0.45 0.5
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
tp
Tamb(°C)
2/4
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