SGS Thomson Microelectronics STPS60L15CW Datasheet
®
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAJOR PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 125°C
V
(max) 0.33 V
F
FEATURES AND BENEFITS
VERY LOW FORWARD VOLTAGE DROP FOR
■
LESS POWER DISSIPATION AND REDUCED
HEATSINK SIZE
OPERATION JUNCTION TEMPERATURE: 125°C
■
REVERSE VOLTAGE SUITED TO OR-ing OF
■
3V, 5V and 12V RAILS
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Dual center tap schottky rectifier packaged in
TO-247 and suited for N+1 redundancy
operations, this device has an optimized forward
voltage drop to reduce the power losses in the
application.
2x30A
15 V
STPS60L15CW
A1
K
A2
A2
K
A1
TO-247
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitive peak reverse voltage
RMS forward current
Average forward current Tcase = 115°C
δ = 0.5
Surge non repetitive forward
tp = 10 ms Sinusoidal
Per diode
Per device
15 V
40 A
30 A
60
400 A
current
I
RRM
I
RSM
P
ARM
T
stg
T
dV/dt
dPtot
*:
Peak repetitive reverse current tp = 2µs F= 1kHz
Non repetitive peak reverse current tp = 100µs
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
j
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
dTj Rth j a
July 2003 - Ed: 1A
thermal runaway condition for a diode on its own heatsink
−1()
2A
3A
24000 W
-65 to+150 °C
125 °C
10000 V/µs
1/4
STPS60L15CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P (diode 1) x R
Junction to case
th(j-c)
(per diode) + P (diode 2) x R
th(c)
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
Reverse leakage current Tj = 25°C V
Tj = 100°C
V
*
F
Pulse test: * tp =380µs, δ <2%
Forward voltage drop Tj= 25°CI
Tj=25°CI
Tj = 125°C I
Tj = 125°C I
F
F
F
F
To evaluate the conduction losses use the following equation:
P=0.22xI
Fig. 1: Conduction losses versus average
current).
F(AV)
+ 0.0036 I
F2(RMS)
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
Per diode 0.8 °C/W
Total 0.55
Coupling 0.3 °C/W
R=VRRM
0.35 0.85 A
=30A
=60A
=30A
=60A
0.27 0.33
0.39 0.44
16 mA
0.41 V
0.49
P (W)
F(AV)
15.0
12.5
10.0
7.5
5.0
2.5
0.0
δ = 0.05
0 5 10 15 20 25 30 35 40
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
I (A)
F(AV)
35
30
25
20
15
10
5
0
0 25 50 75 100 125
R=R
th(j-a) th(j-c)
R =15°C/W
th(j-a)
T (°C)
amb
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
2/4
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