SGS Thomson Microelectronics STPS41L45CT, STPS41L45CR, STPS41L45CG Datasheet

®
STPS41L45CG/CT/CR
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x20A
45 V
Tj (max) 150 °C
V
(max) 0.47 V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
LOWTHERMAL RESISTANCE
AVALANCHECAPABILITY SPECIFIED
DESCRIPTION
Dual center tab Schottky rectifier suited for 5V output in off line AC/DC power supplies.
Packaged in D2PAK, I2PAK and TO-220AB this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.
A1
A2
A1
PAK
I
STPS41L45CR
K
STPS41L45CG
A2
K
D2PAK
K
TO-220AB
STPS41L45CT
A2
A1
A1
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
stg
Tj
dV/dt
dPtot
*:
Repetitive peak reverse voltage RMS forward current Average forward current Tc = 130°C
Surge non repetitive forward current tp = 10 ms sinusoidal Peak repetitive reverse current tp=2 µs square F=1kHz Repetitive peak avalanche power tp = 1µs Tj = 25°C Storage temperature range Maximum operating junction temperature * Critical rate of rise reverse voltage
<
dTj Rth j a
July 2003 - Ed : 3A
Per diode
δ = 0.5
Per device
thermal runaway condition for a diode on its own heatsink
−1()
45 V 30 A 20 40
220 A
1A
10000 W
-65 to+175 °C 150 °C
10000 V/µs
A
1/6
STPS41L45CG / STPS41L45CT / STPS41L45CR
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
Junction to case
Coupling
When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
Per diode
Total
th(c)
1.5
0.8
0.1
°C/W
*
I
R
Reverse leakage current Tj = 25°C V
R=VRRM
Tj = 125°C
V
*
F
Forward voltage drop Tj = 25°CI
Tj = 125°C I Tj=25°CI Tj = 125°C I
=20A
F
=20A
F
=40A
F
=40A
F
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation : P=0.28xI
Fig.1:Conductionlossesversus average current.
F(AV)
+ 0.0095 I
F2(RMS)
Fig. 2: Average forward current versus ambient temperature (δ = 0.5).
1.2 mA
110 220 mA
0.53 V
0.42 0.47
0.68
0.60 0.66
PF(av)(W)
14
12
10
8
6
4
2
0
0 2 4 6 8 10121416182022242628
δ = 0.05
δ = 0.1
δ = 0.2
IF(av)(A)
δ = 0.5
δ
δ = 1
T
=tp/T
2/6
IF(av)(A)
25
20
15
10
5
tp
0
T
tp
=tp/T
δ
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Rth(j-a)=50°C/W
Tamb(°C)
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