SGS Thomson Microelectronics STPS41L30CT, STPS41L30CR Datasheet
®
STPS41L30CG/CT/CR
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x20A
30 V
Tj (max) 150 °C
V
(max) 0.38 V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
■
NEGLIGIBLE SWITCHING LOSSES
■
EXTREMELY FAST SWITCHING
■
LOW FORWARD VOLTAGE DROP
■
HIGH AVALANCHE CAPABILITY
■
LOW THERMAL RESISTANCE
■
■ AVALANCHECAPABILITY SPECIFIED
DESCRIPTION
Dual center tab Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
2
Packaged in D
PAK, I2PAK and TO-220ABthis
device is intended for use in low voltage, high
frequency inverters, free-wheeling and polarity
protection applications.
A1
A2
A1
2
PAK
I
STPS41L30CR
K
STPS41L30CG
A2
K
D2PAK
K
TO-220AB
STPS41L30CT
A2
A1
A1
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
stg
Tj
dV/dt
dPtot
*:
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 135°C
Surge non repetitive forward current tp = 10 ms sinusoidal
Peak repetitive reverse current tp=2 µs square F=1kHz
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
<
dTj Rth j a
July 2003 - Ed : 3A
Per diode
δ = 0.5
Per device
thermal runaway condition for a diode on its own heatsink
−1()
30 V
30 A
20
40
220 A
1A
6500 W
-65 to+175 °C
150 °C
10000 V/µs
A
1/6
STPS41L30CG / STPS41L30CT / STPS41L30CR
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
Junction to case
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
Reverse leakage current Tj = 25°C V
Tj = 125°C
V
*
F
Forward voltage drop Tj = 25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.27xI
Fig.1:Conductionlossesversus average current.
F(AV)
+ 0.0055 I
F2(RMS)
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
Per diode
th(c)
R=VRRM
=20A
F
=20A
F
=40A
F
=40A
F
Total
1.5
°C/W
0.8
0.1
1.5 mA
170 350 mA
0.48 V
0.35 0.38
0.57
0.47 0.49
PF(av)(W)
11
10
9
8
7
6
5
4
3
2
1
0
0 5 10 15 20 25
δ = 0.1
δ = 0.05
δ = 0.2
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
IF(av)(A)
25
20
15
10
5
0
T
=tp/T
δ
0 25 50 75 100 125 150
Rth(j-a)=50°C/W
tp
Rth(j-a)=Rth(j-c)
Tamb(°C)
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
2/6
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