SGS Thomson Microelectronics STPS41H100CT, STPS41H100CR, STPS41H100CG, STPS41H100CG-TR Datasheet
®
STPS41H100CG/CT/CR
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x20A
100 V
Tj (max) 175 °C
V
(max) 0.67 V
F
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
■
LOW LEAKAGE CURRENT
■
GOOD TRADE OFF BETWEEN LEAKAGE
■
CURRENT AND FORWARD VOLTAGE DROP
■ LOWTHERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Dual center tab Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
2
Packaged in D
PAK, I2PAK and TO-220AB, this
device is intended for use in high frequency
inverters.
A1
A2
K
A1
2
PAK
I
STPS41H100CR
K
D2PAK
STPS41H100CG
A2
K
TO-220AB
STPS41H100CT
A2
A1
A1
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
stg
Tj
dV/dt
dPtot
*:
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 150°C
Surge non repetitive forward current tp = 10 ms sinusoidal
Peak repetitive reverse current tp=2 µs square F=1kHz
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
<
dTj Rth j a
July 2003 - Ed : 3A
Per diode
δ = 0.5
Per device
thermal runaway condition for a diode on its own heatsink
−1()
100 V
30 A
20
40
220 A
1A
18100 W
-65 to+175 °C
175 °C
10000 V/µs
A
1/6
STPS41H100CG/CT/CR
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
Junction to case
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
Per diode
Total
th(c)
1.5
0.8
0.1
°C/W
*
I
R
Reverse leakage current Tj = 25°C V
R=VRRM
Tj = 125°C
V
*
F
Forward voltage drop Tj = 25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
=20A
F
=20A
F
=40A
F
=40A
F
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.58xI
Fig.1:Conductionlossesversus average current.
F(AV)
+ 0.0045 I
F2(RMS)
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
10 µA
310mA
0.80 V
0.62 0.67
0.90
0.70 0.76
PF(av)(W)
16
14
12
10
8
6
4
2
0
0 5 10 15 20 25
δ = 0.1
δ = 0.05
δ = 0.2
IF(av)(A)
δ = 0.5
δ
δ = 1
T
=tp/T
2/6
IF(av)(A)
22
20
18
16
14
12
10
8
6
4
tp
2
=tp/T
δ
0
0 25 50 75 100 125 150 175
Rth(j-a)=50°C/W
T
tp
Rth(j-a)=Rth(j-c)
Tamb(°C)
Loading...