SGS Thomson Microelectronics STPS40L45CG Datasheet

®
STPS40L45CG/CT/CW
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x20A
45 V
Tj (max) 150 °C
(max) 0.49 V
V
F
FEATURES AND BENEFITS
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky barrier rectifier designed for highfrequencySwitchedModePowerSupplies and DC to DC converters.
2
PAK these devices areintended for use in lowvoltage, high frequency inverters, free-wheeling and polarity protection applications.
A1
A2
STPS40L45CG
A1
TO-220AB
STPS40L45CT
K
A2
K
K
A2
A1
D2PAK
A2
K
A1
TO-247
STPS40L45CW
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Tj
dV/dt
dPtot
*:
Repetitive peak reverse voltage RMS forward current Average forward current Tc = 130°C
Surge non repetitive forward current tp = 10 ms Sinusoidal Repetitive peak reverse current tp=2µs square F = 1kHz Non repetitive peak reverse current tp = 100 µs square Repetitive peak avalanche power tp = 1µs Tj = 25°C Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage
<
dTj Rth j a
July 2003 - Ed: 4A
Per diode
δ = 0.5
Per device
thermal runaway conditionfor a diode on its own heatsink
−1()
45 V 30 A 20
40
230 A
2A 3A
8100 W
- 65 to + 150 °C 150 °C
10000 V/µs
A
1/6
STPS40L45CT/CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th(c)
Junction to case
Per diode
Total
Coupling
1.5
°C/W
0.8
0.1 °C/W
When the diodes 1 and 2 areused simultaneously :
Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
Reverse leakage cur­rent
V
*
F
Forward voltage drop
Pulse test:*tp=380µs,δ<2%
Tj = 25°C V
R=VRRM
Tj = 125°C Tj=25°CI Tj = 125°C I Tj = 25°C I Tj = 125°C I
=20A
F
=20A
F
=40A
F
=40A
F
140 280 mA
0.42 0.49
0.6 0.7
0.6 mA
0.53 V
0.69
To evaluate the conduction losses use the following equation : P=0.28xI
F(AV)
+ 0.0105 I
F2(RMS)
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W)
16 14 12 10
8 6 4 2 0
0 2 4 6 8 1012141618202224
δ = 0.05
2/6
δ = 0.1
δ = 0.2
IF(av) (A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 2: Average forward current versus ambient temperature (δ = 0.5, per diode)
IF(av)(A)
22 20 18 16 14 12 10
8 6 4 2 0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
Loading...
+ 4 hidden pages