Datasheet STPS40H100CW Datasheet (SGS Thomson Microelectronics)

®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTI CS
I
F(AV)
V
Tj (max) 175 °C
(max) 0.61 V
V
F
FEATURES AND BENE FITS
2 x 20 A
100 V
STPS40H100CW
A1
K
A2
NEGLIGIB LE SW IT CHING LOSS ES LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE
A2
K1
A1
CURRENT AND FORWARD V OLTAGE DRO P LOW THERMAL RE SISTA NCE
TO-247
AVALANCHE RATED
DESCRIPTION
Dual center tap Schottky rectifier suited for Switch Mode Power Supplies and high fre­quency DC to DC converters.
Packaged in TO-247, this device is intended for use in high frequency inverters.
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
E
T
Repetitive peak reverse voltage 100 V RMS forward current 30 A Average forward current T c = 160° C
δ
= 0.5
Per diode
Per device Surge non repetitive forward current tp = 10 ms sinusoidal 300 A Repetitive peak reverse current tp = 2 µs F = 1kHz square 1 A Non repetitive peak reverse current tp = 100 µs square 4 A Non repetitive avalanche energy Tj = 25°C L= 60 mH
AS
I
= 3 A
as
Storage temperature range - 65 to + 175
stg
20 40
36 mJ
°
Tj Maximum operating junction temperature 175 °C
dV/dt Critical rate of rise of rise voltage 10000 V/µs
A
C
August 1999 - Ed: 3D
1/4
STPS40H100CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
°
R
R
th (j-c)
th (c)
Junction to case Per diode
Total Coupling 0.1
0.9
0.55
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
C/W
* Reverse leakage current Tj = 25°CV
I
R
= V
R
Tj = 125°C515mA
** Forward voltage drop Tj = 25°CI
V
F
Tj = 125°CI Tj = 25°CI Tj = 125°CI
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the foll owing equati on : P = 0.5 x I
Fig. 1:
+ 0.0055 x I
F(AV)
F2(RMS)
Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
16 14 12 10
8 6 4 2 0
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
δ = 0.05
δ = 0.2
δ = 0.1
IF(av) (A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
= 20 A 0.73 V
F
= 20 A 0.58 0.61
F
= 40 A 0.85
F
= 40 A 0.67 0.72
F
Fig. 2:
temperature (δ=0.5, per diode).
IF(av)(A)
22 20 18 16 14 12 10
8 6 4 2
δ
0
0 25 50 75 100 125 150 175
RRM
10
µ
Average forward current versus ambient
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
=tp/T
tp
Tamb(°C)
A
2/4
STPS40H100CW
Fig. 3:
Non repetitive s ur ge peak forward curr ent ver-
sus overload d uration (ma ximum valu es, per diode).
IM(A)
400 350 300 250 200 150 100
IM
50
0
1E-3 1E-2 1E-1 1E+0
Fig. 5:
δ=0.5
t
t(s)
Reverse leakage current versus reverse
Tc=50°C
Tc=100°C
Tc=150°C
voltage applied (maximum v alues, per diode) .
IR(mA)
1E+1
1E+0
1E-1
Tj=125°C
Tj=100°C
Tj=75°C
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
0.0 1E-3 1E-2 1E-1 1E+0
Fig. 6:
Junction capacitance versus reverse
tp(s)
δ
=tp/T
T
tp
voltage applied (typical values, per diode).
C(nF)
3.0
1.0
F=1MHz Tj=25°C
1E-2
1E-3
1E-4
0 102030405060708090100
Fig. 7:
Forward voltage drop versus forward cur-
Tj=25°C
VR(V)
rent (per diode).
IFM(A)
200 100
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Typical values
Tj=125°C
Maximum values
Tj=125°C
Maximum values
VFM(V)
Tj=25°C
0.1
VR(V)
1 2 5 10 20 50 100
3/4
STPS40H100CW
PACKAGE MECHANICAL DAT A
TO-247
V
V
H
L5
L
F2
F4
L1
F3
L3
F1
V2
F(x3)
G
= =
Dia.
L4L2
ME
A
D
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133
G 10.90 0.429
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5° 5° V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
Cooling method: C Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m.
Ordering type Marking Package Weight Base qty Delivery mode
STPS40H100CW STPS40H100CW TO-247 4.36g 30 Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherw ise under any pa tent or patent ri ghts of STMi croelec tronics. Specific ations ment ioned in t his publicati on are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectr oni cs products are not authorized for u se as critical c omponents in life support dev ices or systems wi thou t ex press written ap­proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroel ectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
4/4
Loading...