SGS Thomson Microelectronics STPS40H100CW Datasheet
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTI CS
I
F(AV)
V
RRM
Tj (max) 175 °C
(max) 0.61 V
V
F
FEATURES AND BENE FITS
2 x 20 A
100 V
STPS40H100CW
A1
K
A2
NEGLIGIB LE SW IT CHING LOSS ES
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
A2
K1
A1
CURRENT AND FORWARD V OLTAGE DRO P
LOW THERMAL RE SISTA NCE
TO-247
AVALANCHE RATED
DESCRIPTION
Dual center tap Schottky rectifier suited for
Switch Mode Power Supplies and high frequency DC to DC converters.
Packaged in TO-247, this device is intended for
use in high frequency inverters.
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
E
T
Repetitive peak reverse voltage 100 V
RMS forward current 30 A
Average forward current T c = 160° C
δ
= 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10 ms sinusoidal 300 A
Repetitive peak reverse current tp = 2 µs F = 1kHz square 1 A
Non repetitive peak reverse current tp = 100 µs square 4 A
Non repetitive avalanche energy Tj = 25°C L= 60 mH
AS
I
= 3 A
as
Storage temperature range - 65 to + 175
stg
20
40
36 mJ
°
Tj Maximum operating junction temperature 175 °C
dV/dt Critical rate of rise of rise voltage 10000 V/µs
A
C
August 1999 - Ed: 3D
1/4
STPS40H100CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
°
R
R
th (j-c)
th (c)
Junction to case Per diode
Total
Coupling 0.1
0.9
0.55
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
C/W
* Reverse leakage current Tj = 25°CV
I
R
= V
R
Tj = 125°C515mA
** Forward voltage drop Tj = 25°CI
V
F
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the foll owing equati on :
P = 0.5 x I
Fig. 1:
+ 0.0055 x I
F(AV)
F2(RMS)
Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
16
14
12
10
8
6
4
2
0
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
δ = 0.05
δ = 0.2
δ = 0.1
IF(av) (A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
= 20 A 0.73 V
F
= 20 A 0.58 0.61
F
= 40 A 0.85
F
= 40 A 0.67 0.72
F
Fig. 2:
temperature (δ=0.5, per diode).
IF(av)(A)
22
20
18
16
14
12
10
8
6
4
2
δ
0
0 25 50 75 100 125 150 175
RRM
10
µ
Average forward current versus ambient
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
=tp/T
tp
Tamb(°C)
A
2/4
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