SGS Thomson Microelectronics STPS4045CW, STPS4045CP Datasheet
POWER SCHOTTKY RECTIFIERS
MAINPRODUCTSCHARACTERISTICS
I
F(av)
V
RRM
Tj (max) 175 °C
(max) 0.63 V
V
F
FEATURESAND BENEFITS
VERYSMALLCONDUCTION LOSSES
NEGLIGIBLESWITCHINGLOSSES
EXTREMELYFAST SWITCHING
LOWTHERMALRESISTANCE
DESCRIPTION
Dual center tap Schottky rectifier suited for
switchmodepowersupply and high frequencyDC
toDCconverters.
Packagedeither in SOT-93or TO-247 this device
is intended for usein low voltage,highfrequency
inverters, free wheeling and polarity protection
applications.
2 x 20 A
45 V
STPS4045CP/CW
A1
SOT-93
STPS4045CP
A1
K
A2
A2
K
A2
K
A1
TO-247
STPS4045CW
ABSOLUTE RATINGS
(limitingvalues,per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
Repetitivepeak reversevoltage
RMSforwardcurrent
Averageforwardcurrent Tc= 150°C
δ = 0.5
Per diode
Perdevice
Surgenonrepetitiveforwardcurrent tp = 10 ms sinusoidal
RepetitivePeak reverse current tp = 2 µs square
45 V
30 A
20
40
220 A
1A
F = 1kHz
I
RSM
Tstg
Tj
dV/dt
dPtot
*:
dTj
June 1999 - Ed: 3B
Nonrepetitivepeakreversecurrent tp = 100 µs square
Storagetemperaturerange
Maximumoperating junctiontemperature*
Criticalrateof riseof reverse voltage
<
Rth(j−a
1
thermal runawayconditionfor adiode on its own heatsink
)
3A
- 65 to +175 °C
175 °C
10000 V/µs
A
1/5
STPS4045CP/CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junctionto case Perdiode
total
Coupling
1.5
0.8
0.1
Whenthe diodes1 and2 areused simultaneously:
(diode1) = P(diode1)x R
∆ T
J
(Perdiode)+ P(diode2) x R
th(j-c)
th(c)
STATICELECTRICAL CHARACTERISTICS(per diode)
Symbol Parameter TestsConditions Min. Typ. Max. Unit
*
I
R
V
F
Reverseleakage
current
*
Forward voltagedrop Tj =125°CI
Tj = 25°CV
Tj = 125°C
Tj = 25°CI
Tj = 125°CI
R=VRRM
=20A
F
=40A
F
=40A
F
11 40 mA
0.56 0.63 V
0.7 0.83
200 µA
0.94
°C/W
Pulsetest : *tp= 380 µs,
δ<2%
To evaluatethe conductionlossesuse the followingequation :
P = 0.46x I
Fig. 1: Average forward power dissipation
versus averageforward current(per diode).
PF(av)(W)
18
16
14
12
10
8
6
4
2
0
δ = 0.05
02468101214161820222426
F(AV)
δ = 0.1
+0.0085I
δ = 0.2
IF(av)(A)
F2(RMS)
δ= 0.5
δ
=tp/T
δ =1
Fig. 2: Average current versus ambient
tempe rature (p er d iode ).
IF(av)(A)
22
20
18
16
14
12
10
T
tp
8
6
4
2
0
0 25 50 75 100 125 150 175
δ
=tp/T
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
tp
Tamb(°C)
2/5
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