SGS Thomson Microelectronics STPS4030CT, STPS4030CR Datasheet

®
STPS4030CT/CG/CR
LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x20A
30 V
Tj (max) 150°C
(max) 0.40 V
V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP FOR
HIGHER EFFICIENCY LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters.
2
PAK and I2PAK, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications.
A1
A2
K
A2
A1
D2PAK
STPS4030CG
K
A2
K
A1
TO-220AB
STPS4030CT
A2
K
A1
I2PAK
STPS4030CR
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage RMS forward current Average forward
current
I
FSM
I
RRM
P
ARM
T
Tj
dV/dt
dPtot
*:
Surge non repetitive forwardcurrent tp = 10 ms Sinusoidal Peak repetitive reverse current tp=2 µs square F=1kHz Repetitive peak avalanche power tp = 1µs Tj = 25°C
stg
Storage temperature range Maximum operating junction temperature* Critical rate of riseof reverse voltage (rated V
<
dTj Rth j a
July 2003 - Ed: 2A
Tc = 130°C δ = 0.5
, Tj = 25°C)
R
Per diode Per device
thermal runaway condition for a diode on its own heatsink
−1()
30 V 32 A 20
40
220 A
2A
5300 W
- 65 to + 150 °C 150 °C
10000 V/µs
A
1/6
STPS4030CT/CG/CR
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junction to case TO-220AB - D2PAK-I2PAK
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
V
F
Reverse leakage current
*
Forward voltage drop Tj= 25°CI
Tj = 25°C V Tj = 125°C
Tj = 125°C I Tj=25°CI Tj = 125°C I
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation : P=0.25xI
F(AV)
+ 0.0075 I
F2(RMS)
Per diode
Total
1.6
0.85
Coupling 0.1 °C/W
R=VRRM
0.50 1.0 mA 170 350
=20A
F
=20A
F
=40A
F
=40A
F
0.44 0.49 V
0.35 0.40
0.52 0.61
0.46 0.55
°C/W
Fig.1:Conductionlossesversus average current.
P(W)
12
10
8
6
4
2
0
0 5 10 15 20 25
δ = 0.05
δ = 0.1
δ = 0.2
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 2: Average forward current versus ambient temperature(δ = 0.5).
IF(av)(A)
22 20 18 16 14 12 10
8 6 4 2 0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Rth(j-a)=50°C/W
Tamb(°C)
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2 1
0.8
0.6
0.4
0.2 0
0 25 50 75 100 125 150
T (°C)
j
2/6
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