SGS Thomson Microelectronics STPS3L60S Datasheet
®
MAIN PRODUCT CHARACTERISTI CS
STPS3L60S
POWER SCHOTTKY RECTIFIER
I
F(AV)
V
RRM
3 A
60 V
Tj (max) 150°C
V
(max) 0.65 V
F
FEATURES AND BENE FITS
NEGLIGIBLE SWITCHING LOSSE S
LOW THERMAL RE SISTA NCE
DESCR IPT ION
Schottky rectifier suited for Switched Mode Power
Supplies and high frequency DC t o DC c onverters.
Packaged in SMC, this device is intended for use in
DC/DC chargers.
ABSOLUTE RATINGS (limiting values)
SMC
(JEDEC DO-214AB)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
T
Tj
dV/dt
dPtot
* :
July 1999 - Ed: 1A
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 100°C δ = 0.5
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current tp=2 µs square F=1kHz
stg
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
dTj
Rth(j−a
1
thermal runaway condition for a diode on its own heatsink
)
60 V
10 A
3A
75 A
1A
- 65 to + 175 °C
150 °C
10000 V/µs
1/4
STPS3L60S
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-l)
Junction to leads
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
*
R
Reverse leakage current Tj = 25°CV
= V
R
RRM
Tj = 125°C
*
V
F
Forward voltage drop Tj = 25°CI
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
= 3 A
F
= 3 A
F
= 6 A
F
= 6 A
F
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.54 x I
F(AV)
+ 0.037 I
F2(RMS)
20 °C/W
55 µA
10 15 mA
0.7 V
0.56 0.65
0.94
0.67 0.76
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
2.5
2.0
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
1.5
1.0
T
0.5
=tp/T
0.0
IF(av) (A)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
δ
tp
Fig. 3: Non repetitive surge peak forward
current versus overload duration (maximum
values).
IM(A)
14
12
10
8
6
4
I
M
2
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
Tc=25°C
Tc=50°C
Tc=100°C
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5).
IF(av)(A)
3.5
3.0
Rth(j-a)=Rth(j-l)
2.5
2.0
Rth(j-a)=75°C/W
1.5
δ
=tp/T
T
tp
Tamb(°C)
1.0
0.5
0.0
0 25 50 75 100 125 150
Fig. 4: Relative variation of thermal impedance
junction to lead versus pulse duration.
Zth(j-l)/Rth(j-l)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
δ = 0.2
0.4
0.3
δ = 0.1
0.2
Single pulse
0.1
0.0
1E-3 1E-2 1E-1 1E+0
tp(s)
δ
=tp/T
T
tp
2/4
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