SGS Thomson Microelectronics STPS30L60CW Datasheet
®
MAIN PRODUCT CHARACTERISTI CS
I
F(AV)
V
RRM
2 x 15 A
60 V
Tj (max) 150°C
V
(max) 0.56 V
F
FEATURES AND BENE FITS
NEGLIGIBLE SWITCHING LOSSE S
LOW FORWARD V O LTAGE DROP
LOW THERMAL RE SISTA NCE
DESCRIPTION
STPS30L60CW
POWER SCHOTTKY RECTIFIER
A1
K
A2
A2
K
A1
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters. Packaged in
TO-247
TO-247 this device is intended for use in high
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
T
stg
Tj
dV/dt
dPtot
* :
dTj
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 130°C
δ = 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current tp=2 µs square F=1kHz
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
60 V
30 A
15
30
230 A
2A
- 65 to + 175 °C
150 °C
10000 V/µs
A
July 1999 - Ed: 1A
1/4
STPS30L60CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junction to case
Per diode
Total
Coupling 0.1 °C/W
1.5
0.8
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTE RISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
°C/W
*
I
R
V
F
Reverse leakage
current
*
Forward voltage drop Tj = 25°CI
Tj = 25°CV
Tj = 125°C
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
= V
R
= 15 A
F
= 15 A
F
= 30 A
F
= 30 A
F
RRM
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.42 x I
Fig. 1: Average forward power dis sipation versus
average forward current (per diode).
PF(av)(W)
12
10
8
6
4
2
0
0 2 4 6 8 101214161820
F(AV)
δ = 0.05
+ 0.009 I
δ = 0.1
IF(av) (A)
F2(RMS)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5, per diode).
IF(av)(A)
18
16
14
12
10
8
T
tp
6
4
2
0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
480 µA
77 130 mA
0.6 V
0.5 0.56
0.75
0.65 0.7
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
2/4
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