SGS Thomson Microelectronics STPS30L60CT, STPS30L60CR Datasheet
®
STPS30L60CW/CT/CG/CR
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
2x15A
60 V
Tj (max) 150°C
(max) 0.56 V
V
F
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
■
LOW FORWARD VOLTAGE DROP
■
LOW THERMAL RESISTANCE
■
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters. Packaged in
TO-220, D
2
PAK, I2PAK and TO-247 this device is
intended for use in high frequency inverters.
A1
TO-247
STPS30L60CW
A2
K
A1
D2PAK
STPS30L60CG
A1
A2
A2
K
K
A2
K
A1
TO-220AB
STPS30L60CT
A2
K
A1
I2PAK
STPS30L60CR
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
Tj
dV/dt
dPtot
*:
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 130°C
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current tp=2 µs square F=1kHz
Repetitive peak avalanche power tp = 1µs Tj = 25°C
stg
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
dTj Rth j a
July 2003 - Ed: 3B
Per diode
δ = 0.5
Per device
thermal runaway condition for a diodeon its own heatsink
−1()
60 V
30 A
15
30
230 A
2A
7800 W
- 65 to + 175 °C
150 °C
10000 V/µs
A
1/6
STPS30L60CW/CT/CG/CR
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
Junction to case
When the diodes 1 and 2 areused simultaneously:
∆ Tj(diode 1) = P(diode1) xR
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
Per diode
Total
1.5
0.8
°C/W
Coupling 0.1 °C/W
th(c)
*
I
R
V
F
Reverse leakage current
*
Forward voltage drop Tj = 25°CI
Tj = 25°C VR=V
Tj = 125°C
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
=15A
F
=15A
F
=30A
F
=30A
F
RRM
Pulse test : * tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.42xI
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
12
10
8
6
4
2
0
0 2 4 6 8 101214161820
F(AV)
δ = 0.05
+ 0.009 I
δ = 0.1
IF(av) (A)
F2(RMS)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5, per diode).
IF(av)(A)
18
16
14
12
10
8
T
tp
6
4
2
0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
480 µA
77 130 mA
0.6 V
0.5 0.56
0.75
0.65 0.7
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
2/6
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