SGS Thomson Microelectronics STPS30L30CT, STPS30L30CG Datasheet
®
STPS30L30CT/CG/CG-1
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
2x15A
30 V
Tj (max) 150 °C
V
(max) 0.37 V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
EXTREMELY FAST SWITCHING
n
LOW FORWARD VOLTAGE DROP
n
LOW THERMAL RESISTANCE
n
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switch Mode Power Supply and high frequency
DC to DC converters.
2
Packaged in TO-220AB and D
PAK these devices
areintendedfor use in low voltage, highfrequency
inverters, free-wheeling and polarity protection
applications.
A1
A2
A1
TO-220AB
STPS30L30CT
STPS30L30CG-1
A2
K
I2PAK
K
K
A2
A1
2
PAK
D
STPS30L30CG
A2
K
A1
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Tj
dV/dt
dPtot
*:
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 140°C
Surge non repetitive forward current tp = 10 ms Sinusoidal
Peak repetitive reverse current tp = 2 µs F = 1kHz square
Non repetitive peak reverse current tp = 100µs square
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
<
dTj Rth j a
March 2000 - Ed: 4B
Per diode
δ = 0.5
Per device
thermal runaway condition for a diode on its own heatsink
−1()
30 V
30 A
15
30
220 A
1A
3A
- 65 to + 150 °C
150 °C
10000 V/µs
A
1/5
STPS30L30CT/CG/CG-1
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
Junction to case
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
Per diode
Total
1.5
0.8
Coupling 0.1 °C/W
th(c)
°C/W
*
I
R
V
F
Reverse leakage current
*
Forward voltage drop Tj= 25°C I
Tj = 25°C V
Tj = 125°C
Tj = 125°C I
Tj = 25°C I
Tj = 125°C I
R=VRRM
=15A
F
=15A
F
=30A
F
=30A
F
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P = 0.24x I
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
10
9
8
7
6
5
4
3
2
1
0
0 2 4 6 8 101214161820
F(AV)
δ = 0.05
+ 0.009 I
δ = 0.2
δ = 0.1
IF(av) (A)
F2(RMS)
δ = 0.5
δ
=tp/T
T
δ = 1
Fig. 2: Average current versus ambient
temperature (δ=0.5) (per diode).
IF(av)(A)
16
14
12
10
8
6
4
tp
2
0
0 25 50 75 100 125 150
δ
=tp/T
Rth(j-a)=15°C/W
T
tp
1.5 mA
170 350 mA
0.46 V
0.33 0.37
0.57
0.43 0.5
Rth(j-a)=Rth(j-c)
Rth(j-a)=50°C/W
Tamb(°C)
2/5
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