SGS Thomson Microelectronics STPS3045G Datasheet
®
MAIN PRODUCT CHARACTERISTICS
STPS3045G
POWER SCHO TTKY REC TIFIER
Tj
V
I
F(AV)
V
RRM
(max)
(max)
F
30 A
45 V
175°C
0.63 V
K
FEATURES AND BE NE F ITS
VERY SMALL CONDUCTION LOSS ES
NEGLIGIBLE SWIT CHING LOS SE S
EXTRE MELY F AST SWI TCHI NG
A
A
LOW THERMAL RESISTANCE
HIGH DISSIPATION M INIATURE PACKAGE
D
2
PAK
DESCRIPTION
Single Schottky rectifier suited for switchmode
power supply and high frequency DC to DC converters.
2
Packaged in D
PAK surface mount package , this
device is intended for use in low voltage, high frequency inverters, free wheeling and polarity pr otection applications.
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitive peak reverse voltage 45 V
RMS forward current 50 A
Average forward current Tc = 150°C
δ
= 0.5
Surge non repetitive forward current tp = 10 ms
30 A
200 A
Sinusoidal
I
RRM
Repetitive peak reverse current tp = 2 µs
1A
F = 1kHz square
I
RSM
Non Repetitive peak reverse current tp = 100µs square 3 A
Tstg Storage temperature range - 65 to + 175
Tj Maximum operating junction temperature* 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
dTj
* :
October 1999 - Ed: 4A
1
<
Rth
thermal runaway condition for a diode on its own heatsink
(
)
j−a
°
C
1/5
STPS3045G
THERMAL RE SISTA NC ES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case 1
°
STATIC ELECTRICAL CHARACTER ISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
* Reverse leakage current Tj = 25°CV
I
R
= V
R
RRM
500
Tj = 125°C2080mA
** Forward voltage drop Tj = 125°CI
V
F
Tj = 25°CI
Tj = 125°CI
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
= 30 A 0.53 0.63 V
F
= 60 A 0.84
F
= 60 A 0.68 0.78
F
To evaluate the conduction losses use the following equation :
P = 0.48 x I
F(AV)
+ 0.005 I
F2(RMS)
C/W
µ
A
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40
δ = 0.05
δ = 0.1
δ = 0.2
IF(av) (A)
δ = 0.5
δ
δ = 1
T
=tp/T
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
35
30
25
20
15
Rth(j-a)=30°C/W
10
tp
5
0
0 25 50 75 100 125 150 175
Rth(j-a)=Rth(j-c)
Tamb(°C)
δ
=tp/T
T
tp
2/5
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