SGS Thomson Microelectronics STPS3045CW, STPS3045CT, STPS3045CP, STPS3045CG Datasheet
MAIN PRODUCTCHARACTERISTICS
STPS3045CT/CG/CP/CPI/CW
POWER SCHOTTKY RECTIFIER
I
F(AV)
V
RRM
2 x 15 A
45 V
Tj (max) 175°C
V
F
0.57V
FEATURES AND BENEFITS
VERYSMALLCONDUCTION LOSSES
NEGLIGIBLESWITCHINGLOSSES
EXTREMELYFAST SWITCHING
LOWTHERMALRESISTANCE
INSULATEDPACKAGE:TOP-3I
Insulatingvoltage = 2500VRMS
Capacitance= 12pF
DESCRIPTION
Dualcenter tapSchottkyrectifiersuited forSwitchModePowerSupplyandhighfrequencyDC to DC
converters.
2
Packaged either in TO-220AB, D
PAK, TO-247,
SOT93 or TOP-3I, this device is especially intended for use in low voltage, high frequencyinverters, free wheeling and polarity protection
applications.
A1
A2
TO-220AB
STPS3045CT
K
A2
K
A1
A1
Insulated
TOP-3I
STPS3045CPI
K
A2
A1
2
PAK
D
STPS3045CG
A2
K
June 1999 - Ed: 4B
A1
SOT-93
STPS3045CP
A2
K
A2
K
A1
TO-247
STPS3045CW
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STPS3045CT/CG/CP/CPI/CW
ABSOLUTE RATINGS
(limitingvalues, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitivepeak reversevoltage 45 V
RMSforward current 30 A
Averageforwardcurrent
δ =0.5
TO-220AB
2
D
PAK
Tc = 155°C Per diode
Per device
15
30
SOT-93
TO-247
TOP-3I Tc = 150°C
I
FSM
I
RRM
Surgenon repetitive forwardcurrent tp = 10 ms sinusoidal 220 A
Repetitivepeak reversecurrent tp = 2 µs square
1A
F = 1kHz
I
RSM
Nonrepetitivepeak reversecurrent
tp = 100µs square
3A
Tstg Storagetemperaturerange -65 to +175°C
Tj Maximumoperatingjunction temperature* 175 °C
dV/dt Criticalrateof rise of reversevoltage 10000 V/µs
*:
dPtot
dTj
<
1
Rth(j−a
thermal runawayconditionfor a diode on its own heatsink
)
A
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junctionto case
TO-220AB
2
PAK
D
SOT-93
TO-247
TOP-3I
TO-220AB
2
PAK
D
Per diode
Total
Per diode
Total
Per diode
Total
Coupling 0.10
1.60
0.85
1.5
0.8
2.2
1.6
°C/W
SOT-93
TO-247
TOP-3I
Coupling 1.0
Whenthe diodes1 and 2 are usedsimultaneously:
∆ Tj (diode1) =P (diode1) x R
(perdiode) + P (diode 2)x R
th(j-c)
th(c)
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STPS3045CT/CG/CP/CPI/CW
STATICELECTRICAL CHARACTERISTICS
(Perdiode)
Symbol Parameter TestsConditions Min. Typ. Max. Unit
* Reverseleakage current Tj = 25°CV
I
R
R=VRRM
200 µA
Tj = 125°C1140mA
V
* Forward voltagedrop Tj = 125°CI
F
Tj = 25°CI
Tj = 125°CI
= 15 A 0.5 0.57 V
F
= 30 A 0.84
F
= 30 A 0.65 0.72
F
Pulse test : * tp = 380 µs, δ <2%
To evaluatethe conductionlossesuse thefollowingequation:
P = 0.42x I
Fig. 1:
Average forward power dissipationversus
averageforwardcurrent(per diode).
F(AV)
+0.01I
F2(RMS)
Fig. 2: Average current versus ambient
temperature(δ=0.5,per diode).
PF(av)(W)
12
10
8
δ = 0.05
δ = 0.1
δ = 0.2
δ= 0.5
δ =1
6
4
T
2
0
IF(av)(A)
024681012141618
δ
=tp/T
tp
IF(av)(A)
20
18
16
14
12
Rth(j-a)=Rth(j-c)
TOP-3I
TO-220AB
SOT-93
TO-247
D P
10
8
6
Rth(j-a)=15°C/W
T
4
2
=tp/T
δ
0
0 25 50 75 100 125 150 175
tp
Tamb(°C)
AK
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