SGS Thomson Microelectronics STPS30150CW, STPS30150CFP, STPS30150CT Datasheet
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj 175°C
V
(max) 0.75 V
F
2x15A
150 V
STPS30150CT/CW/CFP
A1
K
A2
A2
K
A1
FEATURES AND BENEFITS
HIGH JUNCTION TEMPERATURE CAPABILITY
■
GOOD TRADE OFF BETWEEN LEAKAGE
■
TO-220FPAB
STPS30150CFP
CURRENT AND FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
■
INSULATED PACKAGE: TO-220FPAB
■
Insulating voltage: 2000V DC
Capacitance: 45pF
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Dual center tap schottky rectifier designed for
TO-247
STPS30150CW
A1
A2
K
A1
TO-220AB
STPS30150CT
high frequency Switched Mode Power
Supplies.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage 150 V
RMS forward current 30 A
Average forward current
δ = 0.5
TO-220FPAB Tc = 110°C per diode
TO-220AB Tc = 155°C
per device
15 A
TO-247 30
P
I
FSM
ARM
T
Surge non repetitive forward current tp = 10 ms sinusoidal 220 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 10500 W
Storage temperature range - 65 to + 175 °C
stg
Tj Maximum operating junction temperature * 175 °C
dV/dt Criticalrate of rise of reverse voltage 10000 V/µs
A2
K
dPtot
*:
<
dTj Rth j a
July 2003 - Ed: 6C
thermal runaway condition for a diode on its own heatsink
−1()
1/6
STPS30150CT/CW/CFP
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
F
Pulse test : * tp=5ms,δ<2%
To evaluate the conduction losses use the following equation:
P=0.64xI
Junction to case TO-220FPAB Per diode
TO-220AB Per diode
TO-247 Per diode
TO-220FPAB Coupling 2.6
TO-220AB Coupling 0.1
TO-247 Coupling 0.1
(Per diode) + P(diode 2) x R
th(j-c)
* Reverse leakage current Tj = 25°C VR=V
th(c)
RRM
Tj = 125°C 8 mA
** Forward voltage drop Tj = 25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
** tp = 380 µs, δ <2%
+ 0.0073 I
F(AV)
F2(RMS)
= 15 A 0.92 V
F
= 15 A 0.69 0.75
F
=30A 1
F
= 30 A 0.8 0.86
F
Total
Total
Total
4
3.3
1.6
0.85
1.5
0.8
6.5 µA
°C/W
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 101112131415161718
δ = 0.05
2/6
δ = 0.2
δ = 0.1
IF(av) (A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(av)(A)
18
16
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
TO-220AB/TO-247/I²PAK/D²PAK
TO-220FPAB
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