SGS Thomson Microelectronics STPS2L30A Datasheet
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STPS2L30A
I
F(AV)
V
RRM
2 A
30 V
Tj (max) 150 °C
(max) 0.375 V
V
F
FEATURES AND BENE FITS
LOW COST DEVICE WITH LOW DROP
FORWARD VOLTAGE FOR LESS POWER
DISSIPATION.
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH LEADS TO THE HIGHEST
YIELD IN THE APPLICATIONS.
HIGH POWER SURFAC E M OUNT MINIATURE
PACKAGE.
DESCR IPT ION
Single Schottky rectifier suited t o Switched Mode
Power Supplies and high frequency DC to DC
converters, freewheel diode and integrated circuit
latch up protection.
Packaged in SMA, this device is especially
intended for use in parallel with MOSFETs in
synchronous rectification.
SMA
JEDEC DO-214AC
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Tj Maximum operating junction temperature * 150
Repetitive peak reverse voltage 30 V
RMS forward current 10 A
Average forward current TL = 120°C
δ
= 0.5 2 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A
Repetitive peak reverse current tp = 2 µs F = 1kHz square 1 A
Non repetitive peak reverse current tp = 100 µs square 1 A
Storage temperature range - 65 to + 150
°
°
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
* :
August 1999 - Ed: 2A
dTj
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
C
C
1/4
STPS2L30A
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-l)
Junction to lead 30
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameters Tests Conditions Min. Typ. Max. Unit
* Reverse leakage current Tj = 25°CV
I
R
= V
R
RRM
200
Tj = 100°C615mA
* Forward voltage drop Tj = 25°CI
V
F
= 2 A 0.45 V
F
Tj = 125°C 0.325 0.375
Tj = 25°CI
= 4 A 0.53
F
Tj = 125°C 0.43 0.51
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.24 x I
F(AV)
+ 0.068 I
F2(RMS )
°
C/W
µ
A
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
1.2
1.0
0.8
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
0.6
0.4
T
0.2
=tp/T
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Fig. 3:
Non repetitive surge peak forward current
IF(av) (A)
δ
tp
versus overload duration (maximum values).
IM(A)
10
8
6
4
I
M
2
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
Ta=25°C
Ta=50°C
Ta=100°C
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
2.2
2.0
1.8
Rth(j-a)=Rth(j-l)
1.6
1.4
Rth(j-a)=120°C/W
1.2
1.0
0.8
0.6
T
0.4
0.2
=tp/T
δ
0.0
0 25 50 75 100 125 150
Fig. 4:
tp
Tamb(°C)
Relative variation of thermal impedance
junction to ambient versus puls e dur ation.
Zth(j-a)/Rth(j-a)
1.0
0.8
0.6
δ = 0.5
0.4
δ = 0.2
0.2
δ = 0.1
0.0
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Single pulse
tp(s)
δ
=tp/T
T
tp
2/4
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