SGS Thomson Microelectronics STPS20L60CT Datasheet
®
STPS20L60CT
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTI CS
I
F(AV)
V
RRM
2 x 10 A
60 V
Tj (max) 150 °C
(max) 0.56 V
V
F
FEATURES AND BENEFITS
LOW FORWARD VOLTA GE DROP
NEGLIGIBLE SW ITCHING LOS S ES
LOW THERMAL RESISTANCE
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB, this device is intended for
use in high frequency inverters.
A1
A2
TO-220AB
A1
K
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
T
stg
Tj
dV/dt
dPtot
* :
dTj
July 1999 - Ed: 1A
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 140°C
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current tp = 2 µs square F = 1kHz
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
Rth(j−a
Per diode
δ = 0.5
1
thermal runaway condition for a diode on its own heatsink
)
Per device
60 V
30 A
10
20
220 A
1A
- 65 to + 175 °C
150 °C
10000 V/µs
A
1/4
STPS20L60CT
THERMA L RE SISTA NC E
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junction to case
Per diode
Total
Coupling 0.1 °C/W
1.6
0.85
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTE RISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
°C/W
*
I
R
Reverse leakage current Tj = 25°CV
= V
R
Tj = 125°C
V
*
F
Forward voltage drop Tj = 25°CI
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
= 10 A
F
= 10 A
F
= 20 A
F
= 20 A
F
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.42x I
Fig. 1: Average forward power dis sipation versus
average forward current (per diode).
PF(av)(W)
8
7
6
5
4
3
2
1
0
0123456789101112
F(AV)
δ = 0.05
+ 0.014 I
δ = 0.1
F2(RMS)
δ = 0.2
IF(av) (A)
δ = 0.5
δ
=tp/T
Fig. 2: Average current versus ambient
temperature (δ=0.5) (per diode).
IF(av)(A)
δ = 1
T
tp
12
10
8
6
4
2
0
0 25 50 75 100 125 150
δ
=tp/T
RRM
T
tp
350 µA
65 95 mA
0.6 V
0.48 0.56
0.74
0.62 0.7
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
2/4
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