SGS Thomson Microelectronics STPS20L45CW, STPS20L45CT, STPS20L45CG, STPS20L45CFP, STPS20L45CF Datasheet

®

STPS20L45CF/CW/CT/CFP/CG

LOW DROP POWER SCHOTTKY RECTIFIER

MAJOR PRODUCTS CHARACTERISTICS

I

F(AV)

V

RRM

2x10A

45 V

Tj (max) 150°C

V

(max) 0.5 V

F

FEATURES AND BENEFITS

LOW FORWARD VOLTAGE DROP MEANING

■

VERY SMALL CONDUCTION LOSSES
LOW SWITCHING LOSSES ALLOWING HIGH

■

FREQUENCY OPERATION
INSULATED PACKAGE: ISOWATT220AB,

■

TO-220FPAB
Insulating voltage = 2000V DC
Capacitance = 12pF

■ AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap Schottky rectifiers designed for
highfrequencyswitchedmodepowersuppliesand
DC to DC converters.

These devices are intendedfor usein low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.

K

A2

A1

D2PAK

STPS20L45CG

K

A1

TO-220FPAB

STPS20L45CFP

K

A1

ISOWATT220AB

STPS20L45CF

A1

K

A2

A2

K

A2

A1

TO-220AB

STPS20L45CT

A2

A1

A2

K

TO-247

STPS20L45CW

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage
RMS forward current
Average forward

current

I

FSM

I

RRM

I

RSM

P

ARM

T

Tj

dV/dt

dPtot

*:

Surge non repetitive forward current tp = 10 ms Sinusoidal
Peak repetitive reverse current tp=2 µs square F=1kHz
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C

stg

Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage

<

dTj Rth j a

July 2003 - Ed: 3C

TO-220AB / D2PAK
TO-247

ISOWATT220AB
TO-220FPAB

Tc = 135°C
δ = 0.5

Tc = 115°C
δ = 0.5

Per diode
Per device

Per diode
Per device

thermal runaway condition for a diode on its own heatsink

−1()

45 V
30 A
10

20
10

20

180 A

1A
2A

4000 W

- 65 to + 150 °C
150 °C

10000 V/µs

A

A

1/9

STPS20L45CF/CW/CT/CFP/CG

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

Junction to case ISOWATT220AB

TO-220FPAB

R

R

th(j-c)

th(j-c)

Junction to case TO-247

Junction to case TO-220AB

D2PAK

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode1) x R

(Per diode) + P(diode2) x R

th(j-c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

*

I

R

V

F

Reverse leakage
current

*

Forward voltage drop Tj = 25°CI

Tj = 25°C V
Tj = 125°C

Tj = 125°C I
Tj=25°CI
Tj = 125°C I

Pulse test : * tp = 380 µs, δ <2%

R=VRRM

=10A

F

=10A

F

=20A

F

=20A

F

Per diode

Total

Coupling

Per diode

Total

Coupling

Per diode

Total

Coupling

th(c)

4.5

°C/W

3.5

2.5

2.2

°C/W

1.20

0.3

2.2

°C/W

1.3

0.3

0.2 mA

65 130 mA

0.55 V

0.44 0.5

0.73

0.62 0.72

To evaluate the conduction losses use the following equation :
P=0.28xI

Fig. 1: Average forward power dissipation versus
average forward current (per diode).

PF(av)(W)

8
7
6
5
4
3
2
1
0

02468101214

δ = 0.05

F(AV)

+ 0.022 I

δ = 0.1

δ = 0.2

IF(av) (A)

F2(RMS)

δ = 0.5

δ

δ = 1

=tp/T

Fig. 2: Average forward current versus ambient
temperature(δ = 0.5, per diode).

IF(av)(A)

12
11
10

9
8
7
6
5

T

tp

4
3
2
1

δ

0

0 25 50 75 100 125 150

=tp/T

Rth(j-a)=Rth(j-c)

ISOWATT220AB

Rth(j-a)=15°C/W

T

tp

Tamb(°C)

TO-220AB/TO-247

2/9

STPS20L45CF/CW/CT/CFP/CG

Fig. 3: Normalized avalanche power derating

versus pulse duration.

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode, TO-220AB, TO-247,

2

PAK).

D

IM(A)

140
120
100

80
60
40

IM

20

0
1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=25°C

Tc=75°C

Tc=125°C

Fig. 4: Normalized avalanche power derating
versus junction temperature.

P(t)

ARM p

P (25°C)

ARM

1.2
1

0.8

0.6

0.4

0.2
0

0 25 50 75 100 125 150

T (°C)

j

Fig. 5-2: Non repetitive surge peak forward

current versus overload duration (maximum
values, per diode, ISOWATT220AB,
TO-220FPAB).

IM(A)

100

90
80
70
60
50
40
30

IM

20
10

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=25°C

Tc=50°C

Tc=100°C

Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
TO-247, D

Zth(j-c)/Rth(j-c)

1.0

0.8

0.6

0.4

0.2

0.0
1E-3 1E-2 1E-1 1E+0

δ = 0.5

δ = 0.2
δ = 0.1

Single pulse

2

PAK).

tp(s)

δ

=tp/T

T

tp

Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AB, TO-220FPAB).

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

0.4

δ = 0.2

δ = 0.1

0.2

Single pulse

0.0
1E-3 1E-2 1E-1 1E+0 1E+1

tp(s)

δ

=tp/T

T

tp

3/9