SGS Thomson Microelectronics STPS20L40CFP Datasheet

®

STPS20L40CF/CW/CT/CFP

LOW DROP POWER SCHOTTKY RECTIFIER

MAJOR PRODUCTS CHARACTERISTICS

I

F(AV)

V

RRM

2x10A

40 V

Tj (max) 150°C

V

(max) 0.5 V

F

FEATURES AND BENEFITS

LOW FORWARD VOLTAGE DROP MEANING

■

VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF

■

THE SCHOTTKY BARRIER INSULATED PACKAGE: ISOWATT220AB,

■

TO-220FPAB Insulating voltage = 200V DC Capacitance = 12pF

■ AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap Schottky rectifiers designed for highfrequencyswitchedmodepowersuppliesand DC to DC converters.

These devices are intendedfor usein low voltage, high frequency inverters, free-wheeling and polarity protection applications.

ABSOLUTE RATINGS (limiting values, per diode)

A1

A2

K

A1

TO-220FPAB

STPS20L40CFP

K

A1

ISOWATT220AB

STPS20L40CF

K

A2

K

A2

A1

TO-220AB

STPS20L40CT

A2

A1

A2

K

TO-247

STPS20L40CW

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage RMS forward current Average forward

current

I

FSM

I

RRM

I

RSM

P

ARM

T

Tj

dV/dt

dPtot

*:

Surge non repetitive forward current tp = 10 ms Sinusoidal Peak repetitive reverse current tp=2µssquare F=1kHz Non repetitive peak reverse current tp = 100 µs square Repetitive peak avalanche power tp = 1µs Tj = 25°C

stg

Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage

<

dTj Rth j a

July 2003 - Ed: 4B

TO-220AB TO-247

ISOWATT220AB TO-220FPAB

Tc = 135°C δ = 0.5

Tc = 115°C δ = 0.5

Per diode Per device

thermal runaway condition for a diode on its own heatsink

−1()

40 V 30 A 10

20 10

20

180 A

1A 2A

4000 W

- 65 to + 150 °C 150 °C

10000 V/µs

A

1/8

STPS20L40CF/CW/CT/CFP

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

Junction to case ISOWATT220AB

TO-220FPAB

R

th(j-c)

Junction to case TO-247

Junction to case TO-220AB

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode1) x R

(Per diode) + P(diode2) x R

th(j-c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

Per diode

Total

Coupling

Per diode

Total

Coupling

Per diode

Total

Coupling

th(c)

4.5

3.5

2.5

2.2

1.20

0.3

2.2

1.3

0.3

°C/W

*

I

R

V

F

Reverse leakage current

*

Forward voltage drop Tj = 25°CI

Tj = 25°C VR=V Tj = 100°C

Tj = 125°C I Tj=25°CI Tj = 125°C I

=10A

F

=10A

F

=20A

F

=20A

F

Pulse test : * tp = 380 µs, δ <2%

To evaluate the conduction losses use the following equation : P=0.28xI

Fig. 1: Average forward power dissipation versus average forward current (per diode).

PF(av)(W)

8 7 6 5 4 3 2 1 0

02468101214

δ = 0.05

F(AV)

+ 0.022 I

δ = 0.1

δ = 0.2

IF(av) (A)

F2(RMS)

δ = 0.5

δ

δ = 1

=tp/T

Fig. 2: Average forward current versus ambient temperature(δ = 0.5, per diode).

IF(av)(A)

12 11 10

9 8 7 6 5

T

tp

4 3 2 1

δ

0

0 25 50 75 100 125 150

RRM

=tp/T

0.7 mA

15 35 mA

0.55 V

0.44 0.5

0.73

0.62 0.72

Rth(j-a)=Rth(j-c)

ISOWATT220AB

Rth(j-a)=15°C/W

T

tp

Tamb(°C)

TO-220AB/TO-247

2/8

STPS20L40CF/CW/CT/CFP

Fig. 3: Normalized avalanche power derating

versus pulse duration.

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode, TO-220AB / TO-247).

IM(A)

140 120 100

80 60 40

IM

20

0 1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=25°C

Tc=75°C

Tc=125°C

Fig. 4: Normalized avalanche power derating versus junction temperature.

P(t)

ARM p

P (25°C)

ARM

1.2 1

0.8

0.6

0.4

0.2 0

0 25 50 75 100 125 150

T (°C)

j

Fig. 5-2: Non repetitive surge peak forward

current versus overload duration (maximum values, per diode, ISOWATT220AB, TO-220FPAB).

IM(A)

100

90 80 70 60 50 40 30

IM

20 10

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=25°C

Tc=50°C

Tc=100°C

Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB / TO-247).

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

δ = 0.2

0.4

δ = 0.1

0.2

Single pulse

0.0 1E-3 1E-2 1E-1 1E+0

tp(s)

δ

=tp/T

T

tp

Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT220AB, TO-220FPAB).

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

0.4

δ = 0.2

δ = 0.1

0.2

Single pulse

0.0 1E-3 1E-2 1E-1 1E+0 1E+1

tp(s)

δ

=tp/T

T

tp

3/8