SGS Thomson Microelectronics STPS20L15G, STPS20L15D Datasheet
®
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTIC S
STPS20L15D/G
I
F(AV)
V
RRM
20 A
15 V
Tj (max) 125° C
(max) 0.33 V
V
F
K
K
FEATURES AND BENEFITS
VERY LOW F O RW ARD VOLTAG E DROP FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK SIZE
REVERSE VOLTAGE SUITED TO OR-ing OF 3V,
A
K
A
NC
5V and 12V RAILS
DESCR IPT ION
2
Packaged in TO-220AC or D
PAK, this device is
especially intended for use as an OR-ing diode in
TO-220AC
STPS20L15D
2
PAK
D
STPS20L15G
fault tolerant power supply equipments.
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 15 V
I
F(RMS)
I
F(AV)
I
FSM
RMS forward current 30 A
Average forward current Tc = 115°C
Surge non repetitive forward current tp = 10 m s
δ
= 1 20 A
310 A
Sinusoidal
I
RRM
I
RSM
T
stg
Repetitive peak reverse current tp = 2 µs F = 1k Hz 2 A
Non repetitive peak reverse current tp = 100 µs3A
Storage temperature range - 65 to + 150
Tj Maximum operating junction temperature * 125
dV/dt Critical rate of rise of reverse voltage 10000 V /µs
dPtot
* :
July 1999 - Ed: 2B
dTj
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
°
C
°
C
1/5
STPS20L15D/G
THERMAL RE SISTA NC ES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case 1.6
°
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
* Reverse leakage
I
R
Tj = 25°CV
= 15V 6 mA
R
current
Tj = 100°CV
* Forward voltage drop Tj = 25°CI
V
F
Tj = 25°CI
Tj = 125°CI
Tj = 125°CI
Pulse test : * tp = 380 µs, δ < 2%
= 15V 200 500
R
= 19 A 0.41 V
F
= 40 A 0.52
F
= 19 A 0.28 0.33
F
= 40 A 0.42 0.50
F
To evaluate the maximum conduction losses use the following equation :
P = 0.18 x I
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10121416182022
δ = 0.05
+ 8.10-3 x I
F(AV)
δ = 0.1
F2(RMS )
δ = 0.2
IF(av) (A)
δ = 0.5
δ
=tp/T
T
δ = 1
Fig. 2:
Average forward current versus ambient
temperature ( δ = 1).
IF(av)(A)
22
20
18
16
14
Rth(j-a)=35°C/W
12
10
8
6
T
4
2
=tp/T
tp
δ
0
0 25 50 75 100 125
tp
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
C/W
Fig. 3:
Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
250
200
150
100
I
M
50
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
2/5
Tc=50°C
Tc=75°C
Tc=110°C
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
0.0
1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0
Single pulse
tp (s)
δ
=tp/T
T
tp
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