SGS Thomson Microelectronics STPS20H100CT, STPS20H100CG-TR, STPS20H100CG-1, STPS20H100CG, STPS20H100CF Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STPS20H100CT/CF/CG/CG-1
I
F(AV)
V
RRM
2 x 10 A
100 V
Tj 175°C
VF(max) 0.64 V
FEATURES AND BENEFITS
n NEGLIGIBLESWITCHINGLOSSES
n HIGHJUNCTIONTEMPERATURECAPABILITY
n GOODTRADEOFFBETWEENLEAKAGE CUR-
RENTANDFORWARDVOLTAGEDROP
n LOWLEAKAGE CURRENT
n AVALANCHE RATED
n INSULATED PACKAGE: ISOWATT220AB
Insulating Voltage = 2000V DC
Capacitance = 45 pF
DESCRIPTION
Dual center tap s c hot t k y rectifier designed for
high frequency m ini ature Switched Mode
Power Supplies suc h as adaptators and on
board D C / DC convert ers .
ABSOLUTE RATINGS (limiting values, per diode)
A1
A2
ISOWATT220AB
STPS20H100CF
K
A1
D2PAK
STPS20H100CG
A1
A2
K
A1
A2
K
A2
K
TO-220AB
STPS20H100CT
A2
K
A1
I2PAK
STPS20H100CG-1
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage 100 V
RMS forward current 30 A
Average forward
current δ = 0.5
TO-220AB
D2PAK / I2PAK
Tc = 160°C per diode
per device
10
20
ISOWATT220AB Tc = 145°C
I
FSM
I
RRM
I
RSM
T
Surge non repetitive forward current tp = 10 ms sinusoidal 250 A
Repetitive peak reverse current tp = 2 µs square F = 1kHz 1 A
Non repetitive peak reverse current tp = 100µs square 3 A
Storage temperature range - 65 to + 175 °C
stg
Tj Maximum operating junction temperature * 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
*:
May 2000 - Ed: 3C
<
dTj Rth j a
−1()
thermal runaway condition for a diode on its own heatsink
A
1/7
STPS20H100CT/CF/CG/CG-1
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
When the diodes 1 and 2are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
IR* Reverse leakage current Tj = 25°CV
V
F
Pulse test : * tp = 5 ms, δ <2%
Junction tocase TO-220AB / D2PAK / I2PAK Per diode 1.6 °C/W
ISOWATT220AB Per diode 4
TO-220AB / D2PAK / I2PAK Total 0.9
ISOWATT220AB Total 3.2 °C/W
TO-220AB / D2PAK / I2PAK Coupling 0.15
ISOWATT220AB Coupling 2.5
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
R=VRRM
4.5 µA
Tj = 125°C26mA
** Forward voltage drop Tj = 25°CI
Tj = 25°CI
Tj = 25°CI
Tj = 25°CI
Tj = 125°CI
Tj = 125°CI
Tj = 125°CI
Tj = 125°CI
** tp = 380 µs, δ <2%
= 8 A 0.71 V
F
= 10 A 0.77
F
= 16 A 0.81
F
= 20 A 0.88
F
= 8 A 0.56 0.58
F
= 10 A 0.59 0.64
F
= 16 A 0.65 0.68
F
= 20 A 0.67 0.73
F
To evaluate the maximum conduction losses use the following equation :
P = 0.55 x I
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
8
6
4
2
0
024681012
F(AV)
+ 0.009 x I
δ= 0.05
F2(RMS)
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
δ
=tp/T
δ =1
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
IF(av)(A)
12
10
8
Rth(j-a)=40°C/W
6
T
tp
4
2
0
0 25 50 75 100 125 150 175
2/7
Rth(j-a)=15°C/W
Tamb(°C)
TO220ABRth(j-a)=Rth(j-c)
ISOWATT220AB
STPS20H100CT/CF/CG/CG-1
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB, D2PAK, I2PAK)
IM(A)
200
180
160
140
120
Tc=50°C
100
80
60
IM
40
20
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=75°C
Tc=125°C
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(TO-220AB, D2PAK, I2PAK).
Zth(j-c)/Rth(j-c)
1.0
Fig. 4: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB).
IM(A)
140
120
100
80
60
40
IM
20
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tj=50°C
Tj=75°C
Tj=125°C
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(ISOWATT220AB).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
tp(s)
0.0
1E-3 1E-2 1E-1 1E+0
δ
=tp/T
T
tp
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
IR(µA)
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
0 102030405060708090100
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
VR(V)
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
tp(s)
0.0
1E-2 1E-1 1E+0 1E+1
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
1000
500
200
VR(V)
100
1 2 5 10 20 50 100
F=1MHz
Tj=25°C
3/7
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