SGS Thomson Microelectronics STPS2060CT Datasheet
®
MAIN PRODUCT CHARA CTERI STICS
STPS2060CT
POWER SCHOTTKY RECTIFIER
I
F(AV)
V
RRM
(max) 0.58 V
V
F
2 x 10 A
60 V
A1
K
A2
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD DROP VOLTAGE
LOW CAPACITANCE
HIGH REVERSE AVALANCHE S URGE
CAPABILITY
A2
K
DESCRIPTION
A1
High voltage dual Schottky rectifier suited to
Switch Mode Power Supplies and other Power
TO-220AB
Converters.
Packaged in TO-220AB, this device is intended for
use in medium voltage operation, and particularly,
in high frequency circuitries where low switching
losses are required.
ABSOLUTE R ATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
Repetitive peak reverse voltage 60 V
RMS forward current Per diode 30 A
Average forward current Tcase = 120°C
V
= 60V
R
δ
= 0.5
Surge non repetitive forward
current
Repetitive peak
reverse curre nt
Non repetitive peak reverse
tp = 10 ms
Sinusoidal
tp = 2 µs
F = 1kHz
tp = 100 µs Per diode 1 A
Per diode
Per device
Per diode 200 A
Per diode 1 A
10
20
current
T
stg
Storage temperature range - 65 to + 150
Tj Maximum junction temperature 150
dV/dt Critical rate of rise of reverse voltage 10000 V /µs
July 1998 - Ed : 1C
A
°
C
1/3
STPS2060CT
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case Per diode 1.6
°
C/W
Total 0.9
R
th(c)
Coupling 0.15
°
C/W
When the diodes 1 and 2 are used simultaneously :
Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
ELECTRICAL STATIC CHARACTERISTICS
(per diode)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
* Reverse leakage current VR = V
R
V
F **
Forward voltage drop IF = 20 A Tj = 125°C0.8V
I
I
RRM
= 10 A Tj = 125°C 0.58 0.67
F
= 20 A Tj = 25°C0.94
F
Tj = 25°C70
T
= 125°C33mA
j
C Capacitance 60 V, 1MHz Tj = 125° C 150 pF
µ
A
Pulse test : * tp = 5 m s, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.54 x I
2/3
F(AV)
+ 0.013 x I
F2(RMS)
Loading...