SGS Thomson Microelectronics STPS2030CG, STPS2030CT Datasheet
®
STPS2030CT/CG/CR
LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x10A
30 V
Tj (max) 150°C
(max) 0.40 V
V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
■
NEGLIGIBLE SWITCHING LOSSES
■
EXTREMELY FAST SWITCHING
■
LOW FORWARD VOLTAGE DROP FOR
■
HIGHER EFFICIENCY
LOW THERMAL RESISTANCE
■
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Dual Schottky rectifier suited for switch Mode
Power Supply and high frequency DC to DC
converters.
2
Packaged in TO-220AB, D
PAK and I2PAK, this
device is intended for use in low voltage high
frequency inverters, free wheeling and polarity
protection applications.
A1
A2
K
A2
A1
D2PAK
STPS2030CG
K
A2
K
A1
TO-220AB
STPS2030CT
A2
K
A1
I2PAK
STPS2030CR
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward
current
I
FSM
I
RRM
I
RSM
P
ARM
T
Tj
dV/dt
dPtot
*:
Surge non repetitive forwardcurrent tp = 10 ms Sinusoidal
Peak repetitive reverse current tp=2 µs square F=1kHz
Non repetitive peak reversecurrent tp = 100 µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
stg
Storage temperature range
Maximum operating junction temperature*
Critical rate of riseof reverse voltage (rated V
<
dTj Rth j a
July 2003 - Ed: 3A
Tc = 140°C
δ = 0.5
, Tj = 25°C)
R
Per diode
Per device
thermal runaway condition for a diode on its own heatsink
−1()
30 V
30 A
10
20
180 A
1A
2A
3000 W
- 65 to + 150 °C
150 °C
10000 V/µs
A
1/6
STPS2030CT/CG/CR
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
Junction to case TO-220AB - D2PAK-I2PAK
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
*
R
V
F
Reverse leakage
current
*
Forward voltage drop Tj= 25°CI
Tj = 25°C VR=V
Tj = 125°C
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.28xI
F(AV)
+ 0.012 I
F2(RMS)
Per diode
Total
2.2
1.3
Coupling 0.3 °C/W
RRM
0.15 1.0 mA
80 160
=10A
F
=10A
F
=20A
F
=20A
F
0.44 0.50 V
0.34 0.40
0.50 0.58
0.44 0.52
°C/W
Fig.1:Conductionlossesversus average current.
P (W)
F(AV)
6
5
4
3
2
1
0
012345678910111213
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
δ = 1
=tp/T
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5).
I (A)
F(AV)
11
10
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
R=R
th(j-a) th(j-c)
R =50°C/W
th(j-a)
T (°C)
amb
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
2/6
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