SGS Thomson Microelectronics STPS20100CT Datasheet
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
VF(max) 0.7V
Tj (max) 175°C
FEATURES
Negligible switching losses
■
Low forward voltage drop
■
Low capacitance
■
High reverse avalanche surge capability
■
2 x 10A
100V
STPS20100CT
A1
K
A2
A2
K
A1
DESCRIPTION
High voltage dual Schottky rectifier suited for
switchmode power supplies and other power
TO-220AB
STP20100CT
converters. Packaged in TO-220AB, this device
is intended for use in medium voltage operation,
and particularly, in high frequency circuitries
where low switching losses and low noise are
required.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitive peak reverse voltage 100 V
RMS forward current
Average forward current δ = 0.5 Tc=110°C
VR= 60V
Surge non repetitive forward current tp=10ms
Per diode 30 A
Per diode
Per device
10
20
Per diode 200 A
sinusoidal
I
RRM
Repetitive peak reverse current tp=2µs
Per diode 1 A
F=1KHz
I
RSM
Non repetitive peak reverse current tp=100µs
Per diode 1 A
A
A
*:
Tstg
Tj
dV/dt
dPtot
Storage temperature range
Maximum junction temperature (*)
Critical rate of rise of reverse voltage
<
dTj Rth j a
August 2002 - Ed:2C
-65to+175 °C
175 °C
1000 V/µs
thermal runaway condition for a diode on its own heatsink
−1()
1/4
STPS20100CT
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-c) Junction to case
Per diode
Total
1.6
0.9
Rth (c) Coupling 0.15
When the diodes 1 and 2 are used simultaneously :
Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
* Reverse leakage current VR=V
I
R
RRM
Tj = 25°C 150 µA
Tj = 125°C 100 mA
** Forward voltage drop IF = 20A Tj = 125°C 0.85 V
V
F
IF = 10A Tj = 125°C 0.60 0.70
IF = 20A Tj = 25°C 0.95
Pulse test : * tp = 5 ms, duty cycle<2%
** tp = 380 µs, duty cycle<2%
°C/W
°C/W
To evaluate the conduction losses use the following equation :
P=0.55xI
Fig. 1 : Average forward power dissipation versus
average forward current. (Per diode)
P
F(av)(W)
12
11
10
9
8
7
6
5
4
3
2
1
0
0123456789101112131415
F(AV)
=0.05
+ 0.015 x I
=0.1
I
F(av)(A)
F2(RMS)
=0.2
=0.5
=tp/T
Fig. 2 : Average current versus ambient
temperature. (duty cycle : 0.5) (Per diode)
I
F(av)(A)
12
=1
T
tp
10
8
6
4
2
0
0 25 50 75 100 125
=0.5
=tp/T
Rth(j-a)=Rth(j-c)
Rth(j-a)=15 C/W
T
tp
Tamb( C)
o
o
2/4
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