SGS Thomson Microelectronics STPS1L40M Datasheet
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STPS1L40M
I
F(AV)
V
RRM
1A
40 V
Tj (max) 150°C
V
(max) 0.40V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
■
NEGLIGIBLE SWITCHING LOSSES
■
EXTREMELY FAST SWITCHING
■
LOW FORWARD VOLTAGE DROP FOR
■
HIGHER EFFICIENCY & EXTENDED
BATTERY LIFE
LOW THERMAL RESISTANCE
■
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in ST Mite, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due
to the small size of the package this device fits
battery powered equipment (cellular, notebook,
PDA’s, printers) as well chargers and PCMCIA
cards.
A
C
ST Mite
(DO-216AA)
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
Repetitive peak reverse voltage 40 V
RMS forward current 2 A
Average forward current Tc = 140°C δ = 0.5 1 A
Surge non repetitive forward current tp = 10 ms sinusoidal 50 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 1200 W
Storage temperature range - 65 to + 150 °C
stg
Tj Maximum operating junction temperature* 150 °C
dV/dt Critical rate of rise of reverse voltage (rated Vr, Tj = 25°C) 10000 V/µs
dPtot
*:
<
dTj Rth j a
July 2003 - Ed : 3A
thermal runaway condition for a diode on its own heatsink
−1()
1/5
STPS1L40M
THERMAL RESISTANCE
Symbol Parameter Value Unit
* Junction to case 20 °C/W
R
th (j-c)
* Junction to ambient 250 °C/W
R
th (j-a)
* Montedwithminimum recommended pad size, PC board FR4.
STATIC ELECTRICAL CHARACTERISTICS
Value
Symbol Parameter Tests conditions
I
* Reverse leakage current Tj = 25°C VR=V
R
Tj = 85°C 1.3 4.0
RRM
Min. Typ. Max.
0.021 0.063 mA
Unit
Tj = 25°C V
= 20 V 0.007 0.021
R
Tj = 85°C 0.49 1.5
V
* Forward voltage drop Tj= 25°C IF= 1A 0.40 0.46 V
F
Tj = 85°C 0.35 0.40
Tj = 25°C I
= 3 A 0.52 0.60
F
Tj= 85°C 0.50 0.58
Pulse test : * tp ≤ 380 µs, δ≤2%
To evaluate the conduction losses use the following equation :
P=0.34xI
F(AV)
+ 0.07 I
F2(RMS)
2/5
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