SGS Thomson Microelectronics STPS1L40U, STPS1L40A Datasheet
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTIC S
STPS1L40A/U
I
F(AV)
V
RRM
1 A
40 V
Tj (max) 150 °C
(max) 0.42 V
V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOS SES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTA GE DROP
SURFACE MOUNT MINIATURE PACKAGE
DESCRIPTION
Single chip Schottky rectifiers suited to Switched
Mode Power Supplies and high f requency DC to
DC converters.
Packaged in SMA and SMB, this device is
especially intended for surface mounting and used
in low voltage, high frequency inverters, free
wheeling and polarity protection applications.
ABSOLUTE RATINGS
(limiting values)
SMA
(JEDEC DO-214AC)
STPS1L40A
SMB
(JEDEC D O- 214AA )
STPS1L40U
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Repetitive peak reverse voltage 40 V
RMS forward current 8 A
Average forward current TL = 130°C
δ
= 0.5 1 A
Surge non repetitive forward current tp = 10 ms Sinus oidal 60 A
Repetitive peak reverse current tp = 2 µs square F=1kHz 1 A
Non repetitive peak reverse c urrent tp = 100 µs square 1 A
Storage temperature range - 65 to + 150
Tj Maximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
* :
July 1999 - Ed: 3A
dTj
<
Rth(j
1
thermal runaway condition for a diode on its own heatsink
a
−
)
°
C
1/5
STPS1L40A/U
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-l)
Junction to lead SMA 30
SMB 25
STATIC ELECTRICAL CHARACTERISTICS
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
* Reverse leakage current T j = 25°CV
I
R
= 40 V 35
R
Tj = 125°C610mA
* Forward voltage drop Tj = 25°CI
V
F
= 1 A 0.5 V
F
Tj = 125°C 0.37 0.42
Tj = 25°CI
= 2 A 0.63
F
Tj = 125°C 0.5 0.61
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.23 x I
F(AV)
+ 0.19 I
F2(RMS )
°
C/W
µ
A
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
0.70
0.60
0.50
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
0.40
0.30
δ
=tp/T
T
tp
0.20
0.10
0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IF(av) (A)
Fig. 3-1:
Non repetitive surge peak forward current versus overload duration (maximum values)
(SMB).
IM(A)
7
6
5
4
3
2
I
M
1
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
Ta=25°C
Ta=50°C
Ta=100°C
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
1.2
1.0
0.8
0.6
0.4
Rth(j-a)=120°C/W
Rth(j-a)=100°C/W
T
Rth(j-a)=Rth(j-l)
0.2
=tp/T
δ
0.0
0 25 50 75 100 125 150
Fig. 3-2:
tp
Tamb(°C)
Non repetitive surge peak forward current versus overload duration (maximum values)
(SMA).
IM(A)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
I
M
1.0
0.5
0.0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
Ta=25°C
Ta=50°C
Ta=100°C
2/5
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