SGS Thomson Microelectronics STPS16L45CFP Datasheet

®

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS

I

F(AV)

V

RRM

Tj (max) 150 °C

V

(max) 0.45 V

F

FEATURES AND BENEFITS

LOW FORWARD VOLTAGE DROP MEANING

■

VERY SMALL CONDUCTION LOSSES
LOW SWITCHING LOSSES ALLOWING HIGH

■

FREQUENCY OPERATION
INSULATED PACKAGE: TO-220FPAB

■

Insulated voltage: 2000V DC
Capacitance: 12 pF

AVALANCHE CAPABILITY SPECIFIED

■

DESCRIPTION

Dual center tap Schottky barrier rectifier designed
for highfrequencySwitchedModePowerSupplies
and high frequency DC to DC converters.

Packaged in TO-220AB and TO-220FPAB, these
devices are intended for use in low voltage, high
frequency converters, free-wheeling and polarity
protection applications.

ABSOLUTE RATINGS (limiting values, per diode)

2x8A

45 V

STPS16L45CT/CFP

A1

K

A2

A2

K

A1

TO-220AB

STPS16L45CT

TO-220FPAB

STPS16L45CFP

A1

A2

K

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

P

ARM

T

stg

Tj

dV/dt

dPtot

*:

Repetitive peak reverse voltage
RMS forward current
Average forward current

Surge non repetitive forward current tp = 10 ms sinusoidal
Repetitive peak reverse current tp=2 µs square F=1kHz
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage

<

dTj Rth j a

July 2003 - Ed : 3C

TO-220AB

TO-220FPAB

Tc = 140°C

δ = 0.5

Tc = 125°C

δ = 0.5

Per diode
Per device
Per diode
Per device

thermal runaway condition for a diodeon its own heatsink

−1()

45 V
30 A

8

16

8

16

180 A

1A
2A

4000 W

-65 to+150 °C
150 °C

10000 V/µs

A

A

1/5

STPS16L45CT/CFP

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

Junction to case TO-220AB

TO-220FPAB

When the diodes 1 and 2 areused simultaneously :
∆ Tj(diode 1) = P(diode1) x R

(Per diode) + P(diode 2) x R

th(j-c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

*

I

R

V

F

Reverse leakage
current

*

Forward voltage drop Tj = 25°CI

Tj = 25°C V
Tj = 125°C

Tj = 125°C I
Tj=25°CI
Tj = 125°C I

Pulse test : * tp = 380 µs, δ <2%

R=VRRM

=8A

F

=8A

F

=16A

F

=16A

F

Per diode

Total

Coupling

Per diode

Total

Coupling

th(c)

2.2

°C/W

1.3

0.3

4.5

3.5

2.5

0.2 mA

65 130 mA

0.5 V

0.39 0.45

0.63

0.55 0.64

To evaluate the conduction losses use the following equation :
P=0.26xI

Fig. 1: Average forward power dissipation versus
average forward current (per diode).

PF(av)(W)

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0
012345678910

Fig. 3: Normalized avalanche power derating
versus pulse duration.

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

0.001

+ 0.024 I

F(AV)

δ = 0.1

δ = 0.05

0.10.01 1

F2(RMS)

δ = 0.2

IF(av) (A)

t (µs)

p

δ = 0.5

δ = 1

T

=tp/T

δ

10 100 1000

tp

Fig. 2: Average current versus ambient
temperature (δ = 0.5) (per diode).

IF(av)(A)

9
8
7
6
5
4
3
2
1

=tp/T

δ

0

0 25 50 75 100 125 150

Fig. 4: Normalized avalanche power derating
versus junction temperature.

P(t)

ARM p

P (25°C)

ARM

1.2
1

0.8

0.6

0.4

0.2
0

0 25 50 75 100 125 150

Rth(j-a)=Rth(j-c)

Rth(j-a)=15°C/W

T

tp

Tamb(°C)

T (°C)

j

TO-220AB

TO-220FPAB

2/5