SGS Thomson Microelectronics STPS16L40CT Datasheet
®
LOW DROP POWER SCHOTTK Y RECTIFIER
MAIN PRODUCTS CHARACTE RISTICS
STPS16L40CT
I
F(AV)
V
RRM
Tj (max) 150 °C
(max) 0.45 V
V
F
2 x 8 A
40 V
A1
K
A2
FEATURES AND BENEFITS
LOW FORWARD VOLTAGE DROP FOR LESS
POWER DISSIPATION
NEGLIGIB LE SWITCH ING LOS SES ALLOWIN G
HIGH FREQUENCY OPERATION
AVALANCHE RATE D
A1
A2
K
DESCRIPTION
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and high frequency DC to DC converters.
TO-220AB
Packaged in TO-220AB this device is intended for
use in low voltage, high frequency converters,
free-wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Tj
dV/dt
Repetitive peak reverse voltage
RMS forward current
Average forward current
Tc = 140°C
δ = 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10 ms sinusoidal
Repetitive peak reverse current tp=2 µs square F=1kHz
Non repetitive peak reverse current tp = 100 µs square
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of r everse voltage
40 V
30 A
8A
16 A
180 A
1A
2A
- 65 to + 150 °C
150 °C
10000 V/µs
dPtot
* :
dTj
July 1999 - Ed : 5A
<
Rth(j
1
thermal runaway condition for a diode on its own heatsink
a
−
)
1/4
STPS16L40CT
THERMA L RE SISTA NC ES
Symbol Parameter Value Uni t
R
R
th(j-c)
th(c)
Junction to case
Per diode
Total
Coupling 0.3
2.2
1.3
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTE RISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
°C/W
*
I
R
V
F
Reverse leakage
current
*
Forward voltage drop Tj = 25°CI
Tj = 25°CV
Tj = 100°C
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
= V
R
= 8 A
F
= 8 A
F
= 16 A
F
= 16 A
F
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.26 x I
Fig. 1: Average forward power dis sipation versus
average forward current (per diode).
F(AV)
+ 0.024 I
F2(RMS)
Fig. 2: Average current versus ambient
temperature (δ = 0.5) (per diode).
RRM
0.7 mA
15 35 mA
0.5 V
0.39 0.45
0.63
0.55 0.64
PF(av)(W)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
012345678910
δ = 0.05
δ = 0.1
δ = 0.2
IF(av) (A)
δ = 0.5
δ
δ = 1
T
=tp/T
2/4
IF(av)(A)
9
8
7
6
5
4
3
2
tp
1
0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
Rth(j-a)=15°C/W
Tamb(°C)
Rth(j-a)=Rth(j-c)
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