SGS Thomson Microelectronics STPS16150CT, STPS16150CG Datasheet
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj 175°C
V
(max) 0.75 V
F
FEATURES AND BENEFITS
HIGH JUNCTION TEMPERATURE CAPABILITY
■
GOOD TRADE OFF BETWEEN LEAKAGE
■
CURRENT AND FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
■
■ AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency Switched Mode Power
Supplies.
2x8A
150 V
STPS16150CT/CG/CR
A1
K
A2
I2PAK
STPS16150CR
K
A2
A1
2
D
PAK
STPS16150CG
TO-220AB
STPS16150CT
A1
A1
A2
K
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
Repetitive peak reverse voltage 150 V
RMS forward current 20 A
Average forward current
δ = 0.5
TO-220AB
D2PAK/I2PAK
Tc = 150°C per diode
per device
Surge non repetitive forward current tp = 10 ms sinusoidal 150 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 4700 W
Storage temperature range - 65 to + 175 °C
stg
8
16
Tj Maximum operating junction temperature 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
July 2003 - Ed: 6C
A
1/5
STPS16150CT/CG/CR
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
F
Pulse test : * tp=5ms,δ<2%
To evaluate the conduction losses use the following equation:
P=0.64xI
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Junction to case TO-220AB / D2PAK/I2PAK Per diode 3 °C/W
Total 1.8
TO-220AB / D2PAK/I2PAK Coupling 0.6
(Per diode) + P(diode 2) x R
th(j-c)
* Reverse leakage current Tj = 25°C VR=V
th(c)
RRM
3.0 µA
Tj = 125°C 4.0 mA
** Forwardvoltage drop Tj = 25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
** tp = 380 µs, δ <2%
+ 0.014 I
F(AV)
F2(RMS)
= 8 A 0.92 V
F
= 8 A 0.70 0.75
F
=16A 1
F
= 16 A 0.8 0.86
F
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
PF(av)(W)
8
7
6
5
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
4
3
δ
=tp/T
T
tp
2
1
0
012345678910
IF(av) (A)
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
IF(av)(A)
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
Rth(j-a)=15°C/W
Tamb(°C)
Rth(j-a)=Rth(j-c)
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
2/5
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