SGS Thomson Microelectronics STPS160H100TV Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAINPRODUCT CHARACTERISTICS
STPS160H100TV
I
F(AV)
V
RRM
2 x 80 A
100 V
Tj (max) 150 °C
(max) 0.68 V
V
F
FEATURESAND BENEFITS
NEGLIGIBLESWITCHING LOSSES
HIGHJUNCTIONTEMPERATURECAPABILITY
LOWLEAKAGECURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENTANDFORWARD VOLTAGEDROP
AVALANCHERATED
LOWINDUCTIONPACKAGE
INSULATEDPACKAGE:
InsulatingVoltage= 2500 V
(RMS)
Capacitance= 45 pF
DESCRIPTION
High voltage dual Schottky rectifier designed
for high frequency telecom and computer
Switched Mode Power Supplies and other
powerconverters.
K2K1A2
A1
ISOTOP
TM
Packaged in ISOTOP, this device is intendedfor
use in medium voltage operation, and particularly, in high frequency circuitries where low
switching losses and low noise are required.
ABSOLUTE RATINGS
(limiting values,per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
Repetitivepeak reversevoltage 100 V
RMS forwardcurrent 180 A
Averageforwardcurrent Tc =110°C
δ = 0.5
Perdiode
Perdevice
Surgenon repetitiveforward current tp = 10 ms sinusoidal 1000 A
Repetitivepeak reversecurrent tp = 2 µssquareF = 1kHz 2 A
Non repetitivepeakreverse current tp = 100µs square 10 A
Storagetemperaturerange -55 to+150°C
stg
80
160
Tj Maximumoperatingjunction temperature* 150 °C
dV/dt Criticalrate of rise of reversevoltage 10000 V/µs
<
1
Rth(j−a
thermal runawayconditionfor a diodeon its own heatsink
)
dPtot
*:
dTj
July 1999- Ed:2A
A
1/4
STPS160H100TV
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
Whenthe diodes1 and2 areused simultaneously:
∆ Tj(diode1) = P(diode1)x R
Junctionto case Perleg 0.9 °C/W
Total 0.5 °C/W
0.14 °C/W
(Per diode)+ P(diode2) x R
th(j-c)
Coupling
th(c)
STATICELECTRICALCHARACTERISTICS
(per diode)
Symbol Parameter TestsConditions Min. Typ. Max. Unit
I
* Reverseleakage Current Tj = 25°CV
R
R=VRRM
40
Tj = 125°C1350mA
V
** ForwardVoltage drop Tj =25°CI
F
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
Pulse test : * tp = 5 ms, δ <2%
** tp = 380 µs, δ <2%
To evaluate the conduction losses use the followingequation :
P = 0.56 x I
F(AV)
+0.0015 x I
F2(RMS)
= 60 A 0.75 V
F
= 60 A 0.59 0.63
F
= 80 A 0.80
F
= 80 A 0.63 0.68
F
= 120 A 0.87
F
= 120 A 0.69 0.74
F
= 160 A 0.92
F
= 160 A 0.75 0.80
F
µ
A
Fig. 1:
Averageforward power dissipationversus
averageforwardcurrent (per diode).
PF(av)(W)
80
70
60
50
40
30
20
10
0
0 20406080100
δ = 0.05
2/4
δ = 0.1
IF(av) (A)
δ = 0.2
δ= 0.5
δ
=tp/T
δ =1
T
tp
Fig. 2:
Average forward current versus ambient
temperature(δ=0.5,per diode).
IF(av)(A)
100
80
60
40
T
20
=tp/T tp
δ
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Rth(j-a)=2°C/W
Tamb(°C)
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