SGS Thomson Microelectronics STPS16045TV Datasheet
MAINPRODUCTCHARACTERISTICS
STPS16045TV
POWER SCHOTTKY RECTIFIER
I
F(AV)
V
RRM
2 x 80 A
45 V
A2K2
Tj (max) 150 °C
(max) 0.69 V
V
F
A1K1
FEATURESAND BENEFITS
VERYSMALLCONDUCTIONLOSSES
NEGLIGIBLESWITCHINGLOSSES
EXTREMELYFAST SWITCHING
LOWTHERMALRESISTANCE
INSULATEDPACKAGE:
Insulatingvoltage =2500V
(RMS)
Capacitance= 45 pF
DESCRIPTION ISOTOP
Dual power Schottky rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DCconverters.
Packagedin ISOTOP,this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection
applications.
ABSOLUTERATINGS(limitingvalues,per diode)
TM
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
Repetitivepeak reversevoltage 45 V
RMSforward current 125 A
Averageforward current Tc=75°C
δ
=0.5
Perdiode
Perdevice
80
160
Surgenon repetitiveforwardcurrent tp = 10mssinusoidal 900 A
Repetitivepeak reversecurrent tp = 2 µs square
2A
F =1kHz
I
RSM
T
stg
Non repetitivepeakreversecurrent tp = 100µs square 5 A
Storagetemperaturerange - 55 to + 150 °C
Tj Maximumoperatingjunctiontemperature* 150 °C
dV/dt Criticalrateof riseof reverse voltage 10000 V/µs
dPtot
*:
dTj
ISOTOPis atrademark of STMicroelectronics
June 1999 -Ed:3A
<
1
Rth(j−a
thermal runawayconditionfor a diode on itsownheatsink
)
A
1/4
STPS16045TV
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
When thediodes 1 and 2 areused simultaneously :
∆ Tj(diode 1)= P(diode) xR
Junctionto case Perdiode 1 °C/W
Total 0.55
Coupling 0.1
(Per diode)+ P(diode 2)x R
th(j-c)
th(c)
STATICELECTRICAL CHARACTERISTICS
(per diode)
Symbol Parameter TestsConditions Min. Typ. Max. Unit
* Reverseleakage current Tj = 25°CV
I
R
R=VRRM
1mA
Tj = 125°C 43 150
* Forward voltagedrop Tj = 125°CI
V
F
Tj = 25°CI
Tj = 125°CI
Pulse test : * tp = 380µs,δ<2%
To evaluatethe conduction losses use thefollowing equation :
P = 0.48x I
Fig. 1:
+ 0.00262 xI
F(AV)
F2(RMS)
Average forward power dissipation versus
averageforwardcurrent (perdiode).
PF(av)(W)
80
70
60
50
40
30
20
10
0
δ = 0.05
0 102030405060708090100
δ = 0.2
δ = 0.1
IF(av) (A)
δ=0.5
δ
=tp/T
δ =1
T
tp
= 80 A 0.62 0.69 V
F
= 160 A 0.95
F
= 160 A 0.8 0.90
F
Fig. 2:
Average current versus case temperature
(δ=0.5,per diode).
IF(av)(A)
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
δ
=tp/T
Rth(j-a)=Rth(j-c)
T
tp
Rth(j-a)=5°C/W
Tamb(°C)
2/4
Loading...