SGS Thomson Microelectronics STPS15L60CB Datasheet
®
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2 x 7.5 A
60 V
Tj (max) 150 °C
V
(max) 0.52 V
F
STPS15L60CB
POWER SCHOTTKY RECTIFIER
A1
K
A2
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
■
LOW FORWARD VOLTAGE DROP
■
LOW THERMAL RESISTANCE
■
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Dual center tab Schottky rectifier suited for Switch
K
A2
A1
DPAK
Mode Power Supply and high frequency DC to DC
converters.
Package in DPAK, this device is intended for use
in low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
stg
Tj
dV/dt
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 135°C
Surge non repetitive forward current tp = 10 ms sinusoidal
Peak repetitive reverse current tp=2 µs square F=1kHz
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
δ = 0.5
Per diode
Per device
60 V
10 A
7.5
15
75 A
1A
3700 W
-65 to+175 °C
150 °C
10000 V/µs
A
dPtot
*:
<
dTj Rth j a
July 2003 - Ed : 2A
thermal runaway condition for a diode on its own heatsink
−1()
1/4
STPS15L60CB
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
Total
R
th(c)
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
Reverse leakage current Tj = 25°C V
R=VRRM
Tj = 125°C
V
*
F
Forward voltage drop Tj = 25°CI
Pulse test : * tp = 380 µs, δ <2%
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
= 7.5 A
F
= 7.5 A
F
=12A
F
=12A
F
=15A
F
=15A
F
4
°C/W
2.4
0.7
200 µA
45 60 mA
0.62 V
0.52 0.57
0.76
0.62 0.68
0.82
0.66 0.72
To evaluate the conduction losses use the following equation :
P=0.32xI
Fig.1:Conductionlossesversus average current.
F(AV)
+ 0.027 I
F2(RMS)
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
PF(av)(W)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
012345678910
δ = 0.05
δ = 0.2
δ = 0.1
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
IF(av)(A)
9
8
7
6
5
4
3
2
1
=tp/T
δ
0
0 25 50 75 100 125 150
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Rth(j-a)=70°C/W
T
tp
Tamb(°C)
T (°C)
j
2/4
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