SGS Thomson Microelectronics STPS15L45CB Datasheet
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 150 °C
V
(max) 0.46 V
F
2 x 7.5 A
45 V
STPS15L45CB
A1
K
A2
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
■
NEGLIGIBLE SWITCHING LOSSES
■
EXTREMELY FAST SWITCHING
■
LOW FORWARD VOLTAGE DROP
■
■ AVALANCHE CAPABILITY SPECIFIED
K
A2
A1
DPAK
DESCRIPTION
Dual center tab Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
Package in DPAK, this device is intended for use
in low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
stg
Tj
dV/dt
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 140°C
Surge non repetitive forward current tp = 10 ms sinusoidal
Peak repetitive reverse current tp=2 µs square F=1kHz
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
δ = 0.5
Per diode
Per device
45 V
10 A
7.5
15
75 A
1A
3700 W
-65 to+175 °C
150 °C
10000 V/µs
A
dPtot
*:
<
dTj Rth j a
July 2003 - Ed : 2A
thermal runaway condition for a diode on its own heatsink
−1()
1/4
STPS15L45CB
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
Total
R
th(c)
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
Reverse leakage current Tj = 25°C V
R=VRRM
Tj = 125°C
V
*
F
Forward voltage drop Tj = 25°CI
Pulse test : * tp = 380 µs, δ <2%
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
= 7.5 A
F
= 7.5 A
F
=12A
F
=12A
F
=15A
F
=15A
F
4
°C/W
2.4
0.7
1mA
23 45 mA
0.52 V
0.40 0.46
0.60
0.49 0.57
0.64
0.53 0.63
To evaluate the conduction losses use the following equation :
P=0.29xI
Fig.1:Conductionlossesversus average current.
F(AV)
+ 0.023 I
F2(RMS)
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
PF(av)(W)
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
012345678910
δ = 0.05
δ = 0.2
δ = 0.1
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
IF(av)(A)
9
8
7
6
5
4
3
2
1
=tp/T
δ
0
0 25 50 75 100 125 150
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Rth(j-a)=70°C/W
T
tp
Tamb(°C)
T (°C)
j
2/4
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