SGS Thomson Microelectronics STPS15L30CB Datasheet
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 150 °C
V
(max) 0.39 V
F
2 x 7.5 A
30 V
STPS15L30CB
A1
K
A2
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
■
NEGLIGIBLE SWITCHING LOSSES
■
EXTREMELY FAST SWITCHING
■
LOW FORWARD VOLTAGE DROP
■
■ HIGH AVALANCHE CAPABILITY
LOW THERMAL RESISTANCE
■
AVALANCHE CAPABILITY SPECIFIED
■
K
A2
A1
DPAK
DESCRIPTION
Dual center tab Schottky rectifier suited for switch
Mode Power Supply and high frequency DC to DC
converters.
Package in DPAK, this device is intended for use
in low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
stg
Tj
dV/dt
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 140°C
Surge non repetitive forward current tp = 10 ms sinusoidal
Peak repetitive reverse current tp=2 µs square F=1kHz
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
δ = 0.5
Per diode
Per device
30 V
10 A
7.5
15
75 A
1A
2800 W
-65 to+175 °C
150 °C
10000 V/µs
A
dPtot
*:
<
dTj Rth j a
July 2003 - Ed : 2A
thermal runaway condition for a diode on its own heatsink
−1()
1/5
STPS15L30CB
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junction to case
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
Per diode
Total
th(c)
4
2.4
0.7
°C/W
*
I
R
Reverse leakage current Tj = 25°C V
R=VRRM
Tj = 125°C
V
*
F
Pulse test : * tp = 380 µs, δ <2%
Forward voltage drop Tj = 25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
= 7.5 A
F
= 7.5 A
F
=12A
F
=12A
F
=15A
F
=15A
F
To evaluate the conduction losses use the following equation :
P=0.27xI
F(AV)
+ 0.016 I
F2(RMS)
1mA
70 140 mA
0.48 V
0.34 0.39
0.53
0.40 0.47
0.57
0.44 0.51
2/5
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